The peculiarity of the metal-ceramic interface

Zhang, Zaoli; Ye, Long; Cazottes, Sophie; Daniel, Rostislav; Mitterer, Christian; Dehm, Gerhard

doi:10.1038/srep11460

Cited by 26 publications

(19 citation statements)

References 34 publications

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“…In comparison, the lattice mismatch between TiN and fcc Cu amounts to -17% [57,58], thus slightly exceeding the 15% rule. Still, epitaxial growth of Cu on TiN is not an unreasonable assumption, as it has been reported previously for Cu films deposited on MgO, where the lattice mismatch is comparable [59,60]. Pole figure measurements and TEM investigations discussed in the appended Paper I confirm that the TiN/Cu bilayers exhibit a cube-on-cube epitaxial relationship with the substrate, i.e.…”

Section: Epitaxial Growth Of Single-crystalline Filmssupporting

confidence: 53%

High-resolution characterization of TiN diffusion barrier layers

Mühlbacher¹

2015

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Titanium nitride (TiN) films are widely applied as diffusion barrier layers in microelectronic devices. The continued miniaturization of such devices not only poses new challenges to material systems design, but also puts high demands on characterization techniques. To gain understanding of diffusion processes that can eventually lead to failure of the barrier layer and thus of the whole device, it is essential to develop routines to chemically and structurally investigate these layers down to the atomic scale. In the present study, model TiN diffusion barriers with a Cu overlayer acting as the diffusion source were grown by reactive magnetron sputtering on MgO(001) and thermally oxidized Si(001) substrates. Cross-sectional transmission electron microscopy (XTEM) of the pristine samples revealed epitaxial, single-crystalline growth of TiN on MgO(001), while the polycrystalline TiN grown on Si(001) exhibited a [001]-oriented columnar microstructure. Various annealing treatments were carried out to induce diffusion of Cu into the TiN layer. Subsequently, XTEM images were recorded with a high-angle annular dark field detector, which provides strong elemental contrast, to illuminate the correlation between the structure and the barrier efficiency of the single- and polycrystalline TiN layers. Particular regions of interest were investigated more closely by energy dispersive X-ray (EDX) mapping. These investigations are completed by atom probe tomography (APT) studies, which provide a three-dimensional insight into the elemental distribution at the near-interface region with atomic chemical resolution and high sensitivity. In case of the single-crystalline barrier, a uniform Cu-enriched diffusion layer of 12 nm could be detected at the interface after an annealing treatment at 1000 °C for 12 h. This excellent barrier performance can be attributed to the lack of fast diffusion paths such as grain boundaries. Moreover, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N-sublattice for the experimental N/Ti ratio. In comparison, the polycrystalline TiN layers exhibited grain boundaries reaching from the Cu-TiN interface to the substrate, thus providing direct diffusion paths for Cu. However, the microstructure of these columnar layers was still dense without open porosity or voids, so that the onset of grain boundary diffusion could only be found after annealing at 900 °C for 1 h. The present study shows how to combine two high resolution state-of-the-art methods, TEM and APT, to characterize model TiN diffusion barriers. It is shown how to correlate the microstructure with the performance of the barrier layer by two-dimensional EDX mapping and three-dimensional APT. Highly effective Cu-diffusion barrier function is thus demonstrated for single-crystal TiN(001) (up to 1000 °C) and dense polycrystalline TiN (900 °C)

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Section: Epitaxial Growth Of Single-crystalline Filmssupporting

confidence: 53%

High-resolution characterization of TiN diffusion barrier layers

Mühlbacher¹

2015

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“…Experiments indicate that the special ORs with low-indexed planes between metal and oxide crystal exist in metal/oxide interface21. It has been suggested that the crystallographic ORs between the metal film and oxide substrate, especially the bonding between the first layer metal atoms and oxide substrate layer at the interface, determine the properties of metal films22232425. Experiments show that the ORs of interfaces are largely determined by lattice mismatch2026, e.g.…”

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confidence: 99%

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

Fang

et al. 2016

Sci Rep

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Nb films are deposited on single crystal Al2O3 (110) and MgO(111) substrates by e-beam evaporation technique. Structure of Nb films and orientation relationships (ORs) of Nb/Al2O3 and Nb/MgO interface are studied and compared by the combination of experiments and simulations. The experiments show that the Nb films obtain strong (110) texture, and the Nb film on Al2O3(110) substrate shows a higher crystalline quality than that on MgO(111) substrate. First principle calculations show that both the lattice mismatch and the strength of interface bonding play major roles in determining the crystalline perfection of Nb films and ORs between Nb films and single crystal ceramic substrates. The fundamental mechanisms for forming the interfacial configuration in terms of the lattice mismatch and the strength of interface bonding are discussed.

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“…Both contraction and crystal dislocations are generated where there is a break or mismatch in some property. Crystal dislocations repeat at its surface or the interface of a composite crystal (Liu et al., ; Sun et al., ; Zhang et al., ; Zhu, Li, Samanta, Leach, & Gall, ). In the intestine, the interface is a point of low coupling at a frequency step.…”

Section: Discussionmentioning

confidence: 99%

“…Crystal dislocations repeat at its surface or the interface of a composite crystal (Liu et al, 2013;Sun et al, 2016;Zhang et al, 2015;Zhu, Li, Samanta, Leach, & Gall, 2008). In the intestine, the interface is a point of low coupling at a frequency step.…”

Section: Interval Waves As Strainmentioning

confidence: 99%

Slow wave contraction frequency plateaux in the small intestine are composed of discrete waves of interval increase associated with dislocations

Parsons

Huizinga

2018

Experimental Physiology

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A gut-wide network of interstitial cells of Cajal generates electrical oscillations (slow waves) that orchestrate waves of muscle contraction. In the small intestine there is a gradient in slow wave frequency from high at the duodenum to low at the terminal ileum. Time-averaged measurements of frequency have suggested either a smooth or a stepped (plateaued) gradient. We measured individual contraction intervals from diameter maps of the mouse small intestine to create interval maps (IMaps). The IMaps showed that each frequency plateau was composed of discrete waves of increased interval. Each interval wave originated at a terminating contraction wave, a 'dislocation', at the proximal boundary of the plateau. In a model chain of coupled phase oscillators, interval wave frequency increased as coupling decreased or as the natural frequency gradient or noise increased. Injuring the intestine at a proximal point, to destroy coupling, suppressed distal steps, which then reappeared with gap junction block by carbenoxolone. This lent further support to our previous hypothesis that lines of dislocations were fixed by points of low coupling strength. Dislocations, induced by electrical field pulses in the intestine and by equivalent phase shift in the model, were associated with interval waves. When the enteric nervous system was active, IMaps showed a chaotic, turbulent pattern of interval change, with no frequency steps or plateaux. This probably resulted from local, stochastic release of neurotransmitters. Plateaux, dislocations, interval waves and wave turbulence arise from a dynamic interplay between natural frequency and coupling in the network of interstitial cells of Cajal.

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The peculiarity of the metal-ceramic interface

Cited by 26 publications

References 34 publications

High-resolution characterization of TiN diffusion barrier layers

High-resolution characterization of TiN diffusion barrier layers

What determines the interfacial configuration of Nb/Al2O3 and Nb/MgO interface

Slow wave contraction frequency plateaux in the small intestine are composed of discrete waves of interval increase associated with dislocations

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