The performance of CuIn1−xGaxSe2-based photovoltaic cells prepared from low-cost precursor films

Bhattacharya, R. N.; Batchelor, W.; Ramanathan, K.; Contreras, Miguel Á.; Moriarty, T.

doi:10.1016/s0927-0248(00)00056-8

Cited by 39 publications

(19 citation statements)

References 3 publications

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“…It is demonstrated that the formation of copper selenides by reaction Eqs. (6) and (7) is inhibited to some extent from the negative shift of peaks A and B, and the decrease in peak current densities of them. It is important to note that the generated Cu 2 Se by Eq.…”

Section: Resultsmentioning

confidence: 99%

“…The best CIGS solar cell has achieved laboratory conversion efficiency of 19.9% [3]. Currently, there are many techniques available for the preparation of CIGS thin films, such as co-evaporation [4], sputtering [5], electrodeposition [6], electrochemical atomic layer epitaxy [7][8][9], and molecular beam epitaxy [10]. Among these techniques, electrodeposition has been considered to be a promising approach from the viewpoint of non-vacuum, low-cost and large area production [11].…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, in order to produce high efficiency CIGS solar cells, a number of difficulties still have to be overcome in electrodeposition of CIGS thin films, including improving the Ga incorporation levels in deposited films [6], controlling compositional depth profile and structure of the film, and avoiding the codeposition of oxides. In particular, the growth of undesirable secondary phases, representatively copper selenides (Cu 2Àx Se), is rather difficult to be controlled and usually leads to the formation of Cu-rich non-stoichiometric films.…”

Section: Introductionmentioning

confidence: 99%

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Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Liu

Lai

et al. 2011

Journal of Electroanalytical Chemistry

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Liu

Lai

et al. 2011

Journal of Electroanalytical Chemistry

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“…According to M. E. Calixto et al, 8,12 the incorporation of In occurs via reation with H 2 Se, as the reduction product of Cu 3 Se 2 , to form In 2 Se 3 , which rapidly reacts with copper selenides to form CuInSe 2 . And the inclusion of Ga may occur via a similar mechanism to In and/or via the limited precipitation of Ga(OH) 3 . Our group also reported the preliminary electrodeposition mechanism of Cu(In,Ga)Se 2 in a citrate bath, 13 that the insertion of In and Ga may proceed by an underpotential deposition mechanism.…”

mentioning

confidence: 99%

Incorporation Mechanism of Indium and Gallium during Electrodeposition of Cu(In,Ga)Se2 Thin Film

Lai

Liu

Yang

et al. 2011

J. Electrochem. Soc.

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The incorporation mechanism of Indium and Gallium during electrodeposition of Cu(In,Ga)Se 2 thin film from chloride electrolytes using sodium sulfamate as a complexing agent has been investigated by means of cyclic voltammetry (CV) coupled with EDS and Raman techniques. Cyclic voltammetry study was performed in unitary Cu, In, Ga and Se systems, binary Cu-Se system, ternary Cu-In-Se and Cu-Ga-Se systems, and quaternary Cu-In-Ga-Se system. EDS and Raman analysis were carried out to determine the evolution of film composition and phases, respectively. The insertion of In involves three different routes: firstly, surface-induced reduction by copper selenides to form CuInSe 2 ; secondly, reaction with H 2 Se to form indium selenide; thirdly, the direct reduction of In 3+ to In in the presence of high concentration In 3+ . While the Gallium incorporates through two paths: Ga 3+ reacts with H 2 Se to form gallium selenide; and Ga 2 O 3 forms via Ga 3+ hydrolysis from the increase of local pH.

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“…It represents a major obstacle to further advance in efficiency. The band gap in this semiconductor can be varied from 1.01 to 1.65 eV by alloying In with Ga. [2][3][4][5][6] Being * Author to whom correspondence should be addressed. a direct band gap semiconductor, CIGS has very strong light absorption in the relevant solar epission spectrum, thus allowing the total thickness of the functional layers in a solar cell to be only a few micrometers, which in turn reduces the cost and the weight of the cells quite a lot.…”

Section: Introductionmentioning

confidence: 99%

Optical and Structural Properties of Nanostructured CuIn0.7Ga0.3(Se(1−x)Tex)2 Chalcopyrite Thin Films—Effect of Stoichiometry and Annealing

Fiat¹,

Polat²,

Bacaksız³

et al. 2014

j. nanosci. nanotech.

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The aim of this work was to study the dependence of the optical, structural and morphological properties of CuIn0.7Ga0.3(Se(1-x)Te(x))2 (briefly CIGSeTe) thin films for two different stoichiometries (for x = 0.2 and 0.8). The films have been deposited onto soda lime glass (SLG) substrates by the e-beam evaporation technique. The films showed high absorption and revealed optical band gaps ranging from 1.17 eV to 1.06 eV for x = 0 with highest annealing temperatute at 525 degrees C and 1.12 eV to 1.02 eV for x = 0.8 and with highest annealed temperature at 600 degrees C. These results were correlated with the microstructural analysis by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and X-ray diffractometry (XRD). The linear dependence of the lattice parameters as a function of Se and Te contents was examined. X-ray diffraction analyses showed that the films had the single phase chalcopyrite structure. The lattice parameters (a and c) varied linearly with the increase in Te content x from x = 0.2 to x = 0.8. The peak correspondng to the (1 1 2) plane orientation of the films increased with annealing process. Also, SEM images showed that both the grains size and the RMS (root mean square) values increased with annealing and higher Te amount that caused grains aggregation. The relative 600 degrees C elemental composition present in the deposited CIGS films have been measured by using energy dispersive X-ray analysis (EDX).

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The performance of CuIn1−xGaxSe2-based photovoltaic cells prepared from low-cost precursor films

Cited by 39 publications

References 3 publications

Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Effects of sodium sulfamate on electrodeposition of Cu(In,Ga)Se2 thin film

Incorporation Mechanism of Indium and Gallium during Electrodeposition of Cu(In,Ga)Se2 Thin Film

Optical and Structural Properties of Nanostructured CuIn<SUB>0.7</SUB>Ga<SUB>0.3</SUB>(Se<SUB>(1−<I>x</I>)</SUB>Te<SUB><I>x</I></SUB>)<SUB>2</SUB> Chalcopyrite Thin Films—Effect of Stoichiometry and Annealing

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