The phase transformation of CuInS2 from chalcopyrite to wurtzite

Abstract

In the present work, CuInS2 nanoparticles have been successfully synthesized by water-bath method with deionized water as solvent and thioglycolic acid as complexing agent at 80°C. The phase transition of CuInS2 from chalcopyrite to wurtzite was realized by adjusting the pH value of reaction solution. The emergence of Cu2S in the condition of higher pH value of reaction solution led to the formation of wurtzite CuInS2. This facile method that controls the phase structure by adjusting the solution pH value could open a new way to synthesize other I-III-VI2 ternary semiconductor compounds.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0800-z) contains supplementary material, which is available to authorized users.

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“…85-1575). 29 The diffraction peaks are intense and sharp, indicating a high crystallinity for both pyrite and chalcopyrite samples.…”

“…The XRD pattern of chalcopyrite shows a series of peaks indexed to (112), (204), and (312) planes of the standard chalcopyrite structure of CuFeS 2 (JCPDS card file no. 85‐1575) . The diffraction peaks are intense and sharp, indicating a high crystallinity for both pyrite and chalcopyrite samples.…”

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“…Also, the diffraction peaks of PC-CIS180 NCs were found to be wide and weak, implying very small sizes/poor crystallinity. 66,67 Figure 4b shows the PXRD of calcined CIX at 500 °C, i.e., PW-CIS500 NCs. The peak position and relative peak intensities for PW-CIS500 NCs match well with the XRD pattern for the reported hexagonal wurtzite CuInS 2 structure other than the tetragonal chalcopyrite PC-CIS180 NCs.…”

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“…Peak intensity, however, was affected by thermal annealing, with peaks at higher 2θ growing in amplitude. We attribute this behavior to an increase in order in the crystal structure at shorter distances, potentially via removal of grain boundaries, loss of impurity crystal phases, or surface reorganization. − A report on annealing in CISe-OLAm NCs saw that at much higher temperatures (∼870 K) there was a decrease in the defect Raman feature and increase in the (211) diffraction peak which they attributed to reduction of defects . In our experiment on CISe-DPP NCs we did not observe an increase in the (211) feature after heating, which suggests a different process is occurring or that higher temperatures may change the crystal structure substantially.…”