1983
DOI: 10.1149/1.2119547
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The Photocurrent‐Voltage Characteristics of the Heterojunction Combination n ‐ Si / SnO2 / Redox ‐ Electrolyte

Abstract: A model for Schottky barrier-like heterojunction photoelectrodes is presented. This model allows the calculation of the current-voltage curves for such electrodes under different conditions of illumination and electrochemical charge transfer. SnO2-coated n-type Si electrodes in contact with the redox systems KJK4 Fe (CN)e and C12C1-show experimental photocurrent-voltage curves with the behavior predicted by the model. The effect of the charge transfer overvoltage and the expected current limitation due to phot… Show more

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Cited by 50 publications
(27 citation statements)
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“…ALD is a widely-recognized method for depositing very thin and conformal layers that are free of pinholes or cracks that, in present experiments, would allow for catalyst or oxidant diffusion to the underlying silicon substrate. [12][13][14] Calibration experiments were carried out on 3 00 p-Si test wafers to ensure high quality deposition and dene the ALD window-the processing temperature range where nearly ideal deposition is observed because of surface saturating chemisorption of the precursors during each reaction cycle. 15 At least 15 points were measured on each wafer as in Fig.…”
Section: Atomic Layer Deposition Of Tiomentioning
confidence: 99%
“…ALD is a widely-recognized method for depositing very thin and conformal layers that are free of pinholes or cracks that, in present experiments, would allow for catalyst or oxidant diffusion to the underlying silicon substrate. [12][13][14] Calibration experiments were carried out on 3 00 p-Si test wafers to ensure high quality deposition and dene the ALD window-the processing temperature range where nearly ideal deposition is observed because of surface saturating chemisorption of the precursors during each reaction cycle. 15 At least 15 points were measured on each wafer as in Fig.…”
Section: Atomic Layer Deposition Of Tiomentioning
confidence: 99%
“…In this method, two interfaces to separate the processes of the carrier generation at one (photoelectrical junction) and the chemical fuel formation at the other (electrochemical junction) are utilized to replace the single photoelectrochemical interface formed directly by the photoanode with or without a catalyst and the electrolyte. Materials include metals or metallic silicides, 5 wide band gap semiconductors (such as TiO 2 [6][7][8][9] , ZnO, 10 WO 3 , 11 GaN, 12 and Fe 2 O 3 13 ), transparent conducting oxides (TCO, such as mixtures of SnO 2 and In 2 O 3 , 14,15 SnO 2 16,17 and Sb/Ru-SnO 2 18,19 ), transition metal and its oxides polymers (PEDOT:PSS, 27 polyaniline, 28 polyacetylene, 29 and polypyrrole 30 ). Performances of the so-far developed materials or systems greatly depend on the properties of the coating and the two interfaces, such as the barrier height for charge separation, light absorption, photostability/electrochemical stability, hole conductivity, and OER catalytic activity.…”
Section: Introductionmentioning
confidence: 99%
“…Islands of Pt particles were shown to protect n-Si photoanodes in a 4.8 M HBr / 0.03 M Br 2 electrolyte 130. In addition to metals and silicides, conductive oxide coatings such as ITO, SnO 2 , Sb-doped SnO 2 , TiO 2 , Fe 2 O 3 and WO3 have been shown to exhibit stable photoelectrochemical behavior in conjunction with n-Si photoanodes under halide oxidation conditions 76,[131][132][133][134]. Both ion-beam sputtered ITO on n-Si with a RuO 2 co-catalyst, and CVD-grown SnO 2 on n-Si with a Pt co-catalyst, have shown 20 h of stability in either a Cl 2 /Cl -electrolyte (pH = 6.6) or in a I 3 -/I -electrolyte (pH = 1.5), respectively 76.…”
mentioning
confidence: 99%