The photoelectric conversion behavior of GaAs/InGaAs/InAs quantum dots-in-well in double barrier

Wang, W. W.; Ding, Lin; Guo, Fangmin

doi:10.1109/nusod.2014.6935344

Search citation statements

Order By: Relevance

Paper Sections

Select...

A Gaas Ccd1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2014

Publication Types

Select...

Other1

Relationship

Self Cite1

Independent0

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ohmic contact was made both on the top and at the bottom. A square (45μm ×45μm) was left in the top contact to absorb light [15][16][17].…”

Section: A Gaas Ccdmentioning

confidence: 99%

Readout design for imagers with non-saturated integrating

Huang

Guo

2014

2014 IEEE International Conference on Information and Automation (ICIA)

Self Cite

View full text Add to dashboard Cite

GaAs CCD readout circuit in this paper increases the integrating time up to 16 times by increasing the charge readout ability and no worry about degeneration of sensitivity. The readout circuit is composed of a pair of CMI pre-amplifiers, a counting unit, and a CDS, which use 0.35um 2P4M 5V technology. Simulation shows that the integrating time can easily break 250μs when the current flows out from the floating diffusion area of CCD I det =100nA, current gain A c =2 and integrating capacitor C int =2pF. The noise power at the output C sh node is around 1.08×10 -12 V 2 by 4 kHz, which equals only 13e -equivalent noise electrons compared with 3×10 8 e -full charge readout ability.

show abstract

“…Ohmic contact was made both on the top and at the bottom. A square (45μm ×45μm) was left in the top contact to absorb light [15][16][17].…”

Section: A Gaas Ccdmentioning

confidence: 99%