The Photosensitive Mechanism of Gap-Type Amorphous Silicon TFT

Tai, Ya‐Hsiang; Tu, Cheng-Che; Yuan, Yi‐Cheng; Chang, Yujia; Wang, Pin-Chun; Kuo, Yu-Wen

doi:10.1109/ted.2021.3120231

Cited by 6 publications

(5 citation statements)

References 16 publications

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“…Its advantages of high on-region photocurrent, large dynamic range, small size and good compatibility in TFT fabrication process make it a perfect device for ALS and CTS. Its photosensitive mechanism is well explained in our previous paper [7]. In this paper, we propose an alternative Gap-type a-Si TFT for this application.…”

Section: Introductionmentioning

confidence: 66%

47‐1: Ambipolar Gap‐type a‐Si‐TFT Circuit Applied for a Color Ambient Light Sensor

Lin,

Yuan,

Tai

et al. 2023

Symp Digest of Tech Papers

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In this paper, we proposed ambient light sensor (ALS) and color temperature sensor (CTS) circuit integrated in the edge of LCD display panel. The designed circuit is based on the thin film transistor (TFT) technology, the photo TFT can produce high photo current under light for sensor realizing ambient light from 0~50000Lux. Also, CTS circuit are based on ALS circuit but covered with color filter. The result shows that CTS can discriminate different color temperature in ambient light. The biggest advantage of this sensor is that it is compatible with TFT process in manufacturing, and it is small in size and high in efficiency. It has the potential to replace photodiode sensors.

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Section: Introductionmentioning

confidence: 66%

47‐1: Ambipolar Gap‐type a‐Si‐TFT Circuit Applied for a Color Ambient Light Sensor

Lin,

Yuan,

Tai

et al. 2023

Symp Digest of Tech Papers

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“…To enable the absorber existing a strong absorption capacity for electromagnetic waves of different polarization directions, we set the conductivity of VO 2 to 2 10 6 s = ´S m −1 . Apart from this, according to references [34,35], the physical properties of photosensitive silicon remain stable in the temperature range of the phase transition of VO 2 . Thus the structure could realize the expected function in theory.…”

Section: Realizing Narrowband Bidirectional Absorption When Vo 2 Is M...mentioning

confidence: 94%

Switchable bi-functional metasurface for absorption and broadband polarization conversion in terahertz band using vanadium dioxide and photosensitive silicon

Luo,

Qi,

Zhou

et al. 2024

Nanotechnology

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We proposed a bi-functional switchable metasurface based on vanadium dioxide (VO2) and photosensitive silicon. The metasurface functions as a transmissive polarization converter in its insulating state with asymmetric transmission characteristics. It attains a remarkable polarization conversion rate (PCR) surpassing 90% and a notable maximum asymmetric transmission (AT) parameter value of 0.73. This performance is observed within the frequency range from 4.31 THz to 7.86 THz. Dynamic regulation of PCR and AT can be achieved by adjusting the conductivity of photosensitive silicon. To illustrate the underlying factor behind the broadband polarization conversion, the surface current distribution is analyzed at 5.96 THz and 6.08 THz. On the other hand, when VO2 is in the metallic state, the metasurface transforms into a bidirectional absorber with near-perfect absorption in both illumination directions. Under forward incidence of terahertz waves, the absorption rates for the transverse electric (TE) and transverse magnetic (TM) waves are 99.3% at 3.54 THz and 93% at 3.56 THz, respectively. The physical mechanism of near-perfect absorption is explained using impedance matching theory and the electric field distribution. This research expands the applications of transmissive polarization converters within multifunctional metasurfaces, providing new avenues for their practical implementation.

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“…Heating from absorbed radiation will have a certain effect on the absorption characteristics of the absorber, but it is weak and can be neglected [ 38 ]. And the physical properties of Au, SiO 2 , and PSi remain essentially unchanged over the temperature range of the VO 2 phase transition [ 38 , 39 ].…”

Section: Methodsmentioning

confidence: 99%

Switchable and Tunable Terahertz Metamaterial Based on Vanadium Dioxide and Photosensitive Silicon

et al. 2023

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A switchable and tunable terahertz (THz) metamaterial based on photosensitive silicon and Vanadium dioxide (VO2) was proposed. By using a finite-difference time-domain (FDTD) method, the transmission and reflective properties of the metamaterial were investigated theoretically. The results imply that the metamaterial can realize a dual electromagnetically induced transparency (EIT) or two narrow-band absorptions depending on the temperature of the VO2. Additionally, the magnitude of the EIT and two narrow-band absorptions can be tuned by varying the conductivity of photosensitive silicon (PSi) via pumping light. Correspondingly, the slow-light effect accompanying the EIT can also be adjusted.

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The Photosensitive Mechanism of Gap-Type Amorphous Silicon TFT

Cited by 6 publications

References 16 publications

47‐1: Ambipolar Gap‐type a‐Si‐TFT Circuit Applied for a Color Ambient Light Sensor

47‐1: Ambipolar Gap‐type a‐Si‐TFT Circuit Applied for a Color Ambient Light Sensor

Switchable bi-functional metasurface for absorption and broadband polarization conversion in terahertz band using vanadium dioxide and photosensitive silicon

Switchable and Tunable Terahertz Metamaterial Based on Vanadium Dioxide and Photosensitive Silicon

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