The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode

Bodur, M.C.; Duman, S.; Orak, İkram; Sarıtaş, Sevda; Barış, Özlem

doi:10.1016/j.optlastec.2023.109251

Cited by 8 publications

(3 citation statements)

References 69 publications

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“…This situation can also be attributed to the greater retention of mobility loads as a result of the increase in interfacial traps depending on the material used [49]. There are many similar studies in the literature about R, S and D * , which are photodiode parameters [47][48][49][50][51][52][53][54][55][56][57][58][59]. In addition, one of the important parameters for photodiodes or photovoltaic cells is photosensitivity.…”

Section: The Photo/sensitivity-response and Detectivity Properties Of...mentioning

confidence: 99%

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations

Karataş,

2024

Phys. Scr.

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This study aims to examine the electrical, photosensitivity (S), photo-response (R), and photo-detectivity (D*) properties of Au/SiO2/n-type Si structures under different illumination intensities. The illumination-dependent properties of the Au/SiO2/n-type Si structure with SiO2 interlayer were obtained using current–voltage (I-V) characteristics. The ideality factors (n) and barrier heights (Φbo) values of Au/SiO2/n-type Si structures were obtained and compared from forward and reverse bias current–voltage (I-V) measurements at room temperature. Also, barrier heights (Φbo) and series resistance (R S ) values obtained from Norde method were compared with the values obtained from TE theory. It was observed that ideality factor and barrier height values obtained from forward bias region are higher than the values reverse bias. This means that the linearity or rectification feature in the reverse bias region is better than the forward bias region. Furthermore, photodiode values such as photo response (R), photosensitivity (S) and photodetectivity (D*) of Au/SiO2/n type Si structures were also examined depending on the light intensity. Consequently, the experimental results showed that the increase in reverse current with increasing light indicates that the Au/SiO2/n-type Si structures can be used in semiconductor technology as a photodiode, detector or sensor.

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Section: The Photo/sensitivity-response and Detectivity Properties Of...mentioning

confidence: 99%

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations

Karataş,

2024

Phys. Scr.

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“…The FF and efficiency (η) were calculated by using the Equations ( 6) and ( 7). (23) FF = V max × I max V oc × I sc (6)…”

Section: Analysis Of Current Density-voltage Curvementioning

confidence: 99%

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Jayachithra,

Elampari,

Meena

2023

IJST

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Objectives: To find a proper rare earth-doped metal-oxide-based buffer layer for CIGS solar cells with improved performance that has less harmfulness than cadmium. Methods: This study concentrated on the synthesis of pure and Erdoped TiO 2 nanomaterials via microwave-assisted hydrothermal method and its characterization results. Additionally, to analyze the performance of TiO 2 and Er-doped TiO 2 as a buffer layer in a CIGS solar cell, numerical simulations were performed using the SCAPS-1D (Solar cell capacitance simulator) software. Findings: The positive outcomes came from the characterization results, which revealed that the synthesized nanomaterials have an anatase phase, microscopic crystallite size, and flower-like shape. The band gap effectively decreases from 3.45 eV for pure TiO 2 to 2.75 eV for Er-doped TiO 2 , which effectively increases the absorption in the visible portion of the solar spectrum. The refractive indices of pure and Er-doped TiO 2 were calculated as 2.37 and 2.50 respectively from their corresponding band gaps. The results from the simulations showed that using a single buffer layer of Er-doped TiO 2 uplifted the performance of the CIGS solar cell, resulting in higher open circuit voltage, increased short-circuit current density with overall efficiency, η = 25.31% compared to pure TiO 2 and CdS-based dual buffer layers. Novelty: For the first time, the Er-TiO 2 nanomaterial was studied as buffer layer material. The numerical simulation and characterization findings justify the adoption of Er-TiO 2 as a buffer layer in CIGS solar cells.

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“…Therefore, In 2 O 3 has been considered a promising candidate for UVA PD fabrication among indium compounds, due to its suitable bandgap (3.7 eV), high mobility and stable chemical and optical properties [20][21][22]. Currently, UVA PDs based on In 2 O 3 thin films mainly depends on the photovoltaic effect, because it can realize the efficient separation and collection of photogenerated carriers through the built-in electric field and reduce the dark current of the device [23][24][25]. The device structure based on photovoltaic effect mainly includes heterojunctions, transistors and metal-semiconductor-metal (MSM) structures.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Li,

Chen,

et al. 2024

Crystals

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Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.

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The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode

Cited by 8 publications

References 69 publications

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

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The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode

Cited by 8 publications

References 69 publications

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO2/n-Si structures: optoelectronic situations

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO2/n-Si structures: optoelectronic situations

Enhancing CIGS Solar Cell Performance with Erbium-Doped TiO2 Nanomaterial: Simulation Study

Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

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Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO₂/n-Si structures: optoelectronic situations