The Physics of Macropore Formation in Low‐Doped p‐Type Silicon

Abstract

The dependence of the morphology of macropores in p‐type silicon electrodes on formation parameters such as substrate doping density, electrolyte composition, and applied current density is investigated. The results are compared with the well‐understood case of electrochemical macropore formation on n‐type silicon electrodes. A growth model is derived in which pore formation is shown to be a consequence of charge‐transfer mechanisms in a Schottky diode applied to a nonplanar interface. © 1999 The Electrochemical Society. All rights reserved.

Highly N-doped Silicon Nanowires as a Possible Alternative to Carbon for On-chip Electrochemical Capacitors

“…11 This material is known to allow the production of very well oriented macropores with diameters in the range of 1 to 5 µm. 24 The electrodes are made by applying a constant current density of 58 mA cm ¹2 on 3.44 cm 2 surface samples with a 30 wt% HF solution, for different times in the range of 15 to 80 minutes. Such conditions lead to 43 µm deep macroporous layers with an average pore diameter of about 3 µm, after 1 hour.…”

Photoelectrochemical Reduction of Nitrate Ions on Porous Silicon and Different Silicon Modified Electrodes

“…From Figure 3d a section analysis allows determination of an average pore diameter at between approximately 20 -30 mm. These pore diameters are reported in the literature as a micropore 5,14,18,19,20 . Figure 4 shows the morphological characterization of n-type substrates.…”

Development of efficient solar cells with the use of multifunctional multitextures

“…Calculation of electric field distribution near the bottom of a pore yields the model that is proposed in paper [18]; it also provides an explanation to the cause of local dissolution of silicon. The idea is postulated on that the growth of PS occurs when the two reactions compete.…”