We studied ion transport in hybrid organic inorganic perovskite p-in devices as a function of applied bias under device operating conditions. Using electrochemical impedance spectroscopy (EIS) and equivalent circuit modeling, we elucidated various resistive and capacitive elements in the device. We show that ion migration is predictably influenced by a low applied forward bias, characterized by an increased capacitance at the hole transporting (HTM) and electron transporting material (ETM) interfaces, as well as through the bulk. However, unlike observations in n-i-p devices, we found that there is a capacitive discharge leading to possible ion redistribution in the bulk at high forward biases. Furthermore, we show that a chemical double layer capacitance buildup as a result of ion accumulation impacts the electronic properties of the device, likely by either inducing charge pinning or charge screening, depending on the direction of the ion induced field. Lastly, we extrapolate ion diffusion coefficients (~10-7 cm 2 s-1) and ionic conductivities (~10-7 S cm-1) from the Warburg mass (ion) diffusion response, and show that, as the device degrades, there is an overall depletion of capacitive effects coupled with an increased ion mobility. devices at different biases, X-ray diffraction of MAPbI3 under heat and illumination, X-ray diffraction of two-step method, evidence of Warburg diffusion, EIS fit values for one-step and two-step preparation methods, ionic conductivity (σion) values for one-step method, diffusion coefficients for both one and two-step method, comparison of geometric and double layer capacitance for two-step method, comparison of one-step and two-step methods, J-V characteristics of one-step and two-step method, double layer capacitance for devices with different HTMs, equivalent fit trends for the one-step method (PDF).