Many gadgets in our daily life work
on the photodetection
principle.
These photodetectors (such as silicon (Si), gallium arsenide (GaAs),
and indium gallium arsenide (InGaAs)) work on the principle of positive
photoconductivity (PPC), where conductivity increases with light illumination.
However, an opposite phenomenon, where the conductivity decreases
with light exposure, also known as negative photoconductivity (NPC),
has been reported in various inorganic (doped-Si, PbTe, 2D materials),
organic (graphene, carbon nanotubes), and organic–inorganic
hybrid (halide perovskites) materials. The origin of NPC phenomena
in a semiconductor is still debated though its application potential
has recently reached far beyond photodetection. Here, we have critically
analyzed the fundamental photophysics of NPC phenomena in semiconductors,
discussed its mechanistic origin in detail, and demonstrated how it
depends on various external factors, such as temperature, illumination
intensity, humidity, doping concentration, etc. We also highlight
the recent progress of NPC in ultrasensitive detection applications.
Finally, we discussed the existing challenges and provided a roadmap
about how NPC can be helpful in next-generation semiconductor optoelectronics.