The piezoresistive effect in the p-TlInSe2 single crystals

Гусейнов, Г. Г.; Abdullayev, A.G.; Исмайлов, М. И.; Rustamov, V. D.

doi:10.1016/0025-5408(77)90151-9

Cited by 12 publications

(3 citation statements)

References 5 publications

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“…The residue of DTA was examined via powder XRD (Figure ) and showed Tl 2 Hg 3 S 4 and TlInS 2 , indicating that TlHgInS 3 decomposes during heating. Efforts to synthesize the analogous compounds TlHgBiS 3 , TlHgSbS 3 , and TlHgInSe 3 with the same synthetic approach gave only the ternary compounds Tl 2 Hg 3 S 4 and Tl 2 Hg 3 Se 4 , TlBiS 2 , TlSbS 2 , and TlInSe 2 …”

Section: Results and Discussionmentioning

confidence: 99%

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TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

Malliakas

Han

et al. 2015

Chem. Mater.

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The quaternary compound TlHgInS 3 crystallizes in a new structure type of space group C2/c with cell parameters: a = 13.916(3) Å, b = 3.9132(8) Å, c = 21.403(4) Å, β = 104.16(3)°, V = 1130.1(8) Å 3 and ρ = 7.241 g/cm 3 . The structure is a unique three-dimensional framework with parallel tunnels, which is formed by 1 ͚ [InS 33-] infinite chains bridged by linearly coordinated Hg 2+ ions. TlHgInS 3 is a semiconductor with a band gap of 1.74 eV and resistivity of ~4.32 GΩ cm.TlHgInS 3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (µτ) of the electrons and holes estimated from the photocurrent measurements are (µτ) e ~ 3.6×10 -4 cm 2 /V and (µτ) h ~ 2.0 ×10 -4 cm 2 /V. Electronic structure calculations at the Density Functional Theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS 3 is a potential material for radiation detection applications.

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Section: Results and Discussionmentioning

confidence: 99%

“…Efforts to synthesize the analogous compounds TlHgBiS 3 , TlHgSbS 3 , and TlHgInSe 3 with the same synthetic approach gave only the ternary compounds Tl 2 Hg 3 S 4 and Tl 2 Hg 3 Se 4 , 10 TlBiS 2 , 66 TlSbS 2 , 67 and TlInSe 2 . 68 Structure Description. TlHgInS 3 crystallizes in a new structure type.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

Malliakas

Han

et al. 2015

Chem. Mater.

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“…The tensoresistive properties of TlInSe2 single crystals are studied in a number of works [1][2][3]. The presence of a strong piezoresistive effect in tension or compression along the crystallographic axis [1] was established.…”

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confidence: 99%

PHOTOCONDUCTIVITY OF SINGLE-FORMED TlInSe2 SINGLE CRYSTALS

Matiyev¹,

Uspazhiev²

2021

«АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная Научно-Практическая Онлайн-Ко

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Effect of pressure on electrical conductivity of TlInse2 single crystals

Gtjsbinov

Matiev

Malsagov

et al. 1985

phys. stat. sol. (a)

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The effect of hydrostatic pressure on the electrical conductivity of a TlInSe2 single crystal along the tetragonal axis [001] is studied in the range from 0 to 14 × 106 kPa. It is revealed that in this case the dependence of electrical conductivity on pressure follows the law: σ(P) =σ(0) e−GP/2kT which holds true for cases of linear narrowing of the band gap with pressure. It is found that the pressure coefficient of the band gap G = ∂Eg(P)/∂P responsible for the change in the electrical conductivity with pressure amounts to G = (∂ In σ(P)/∂P) 2kT = −1.75 × 10−10eV/Pa which coincides in the order of magnitude with the coefficient G[001] = −(3 to 4) × 10−10 eV/Pa characterizing the narrowing (widening) of the indirect energy gap for a uniaxial compression (expansion) of the given crystals along [001].

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The piezoresistive effect in the p-TlInSe2 single crystals

Cited by 12 publications

References 5 publications

TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

PHOTOCONDUCTIVITY OF SINGLE-FORMED TlInSe2 SINGLE CRYSTALS

Effect of pressure on electrical conductivity of TlInse2 single crystals

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The piezoresistive effect in the p-TlInSe2 single crystals

Cited by 12 publications

References 5 publications

TlHgInS3: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

TlHgInS3: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

PHOTOCONDUCTIVITY OF SINGLE-FORMED TlInSe2 SINGLE CRYSTALS

Effect of pressure on electrical conductivity of TlInse2 single crystals

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TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

TlHgInS₃: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response