The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan, Hoang‐Phuong; Dao, Dzung Viet; Nakamura, Kōichi; Dimitrijev, Sima; Nguyen, Nam‐Trung

doi:10.1109/jmems.2015.2470132

Cited by 222 publications

(163 citation statements)

References 130 publications

(199 reference statements)

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“…Paper 4 was an extension of the study from Paper 3 where we included the adsorption of SiH, SiH2, SiX, SiHX, SiX2 for X being F, Cl and Br. Also, both the C-face and the Si-face were considered.…”

Section: Chapter 4 Results and Summarymentioning

confidence: 99%

“…The study was performed using the same cluster as in Paper 4 and the adsorption was assumed to occur with correct stoichiometry as before. The gaseous hydrocarbon species included in the study were C2H2, C2H4, CH3 and CH4.…”

Section: Chapter 4 Results and Summarymentioning

confidence: 99%

“…SiC has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness [1][2][3][4][5][6][7][8] . Table 1 shows a summary of SiC properties at room temperature in comparison to Si and other wide bandgap semiconductors.…”

Section: Silicon Carbidementioning

confidence: 99%

“…It is also expected that SiC unipolar power devices will replace Si bipolar devices over the blocking range of 300 -6500 V, and there is a promising future for these devices in the ultrahigh (> 10 kV) voltage range 1 . The chemical robustness of Si-C bond and large Young's modulus also make SiC attractive in sensor applications featuring high temperature and hostile environments 4,5,11 as well as biomedical and biosensor applications 12,13 . SiC crystallizes in both cubic zincblende and hexagonal wurtzite structures and exhibits more than 200 polytypes [18][19][20] .…”

Section: Silicon Carbidementioning

confidence: 99%

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A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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Section: Chapter 4 Results and Summarymentioning

confidence: 99%

Section: Chapter 4 Results and Summarymentioning

confidence: 99%

Section: Silicon Carbidementioning

confidence: 99%

Section: Silicon Carbidementioning

confidence: 99%

See 2 more Smart Citations

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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“…[32][33][34][35][36] A comprehensive review on the applications of the piezoresistance of SiC can be found in ref. [37] As show in Figure 4c, the linear current voltage (I-V) characteristic of the 94 nm SiC membrane indicates the good Ohmic contact between Ni and SiC. Next, a constant voltage was applied to the SiC resistors, while the output current was monitored under applied pressure using Agilent B4105, Figure 4d.…”

Section: à3mentioning

confidence: 98%

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

et al. 2017

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This work presents fabrication of micro structures on sub-100 nm SiC membranes with a large aspect ratio up to 1:3200. Unlike conventional processes, this approach starts with Si wet etching to form suspended SiC membranes, followed by micro-machined processes to pattern free-standing microstructures such as cantilevers and micro bridges. This technique eliminates the sticking or the under-etching effects on free-standing structures, enhancing mechanical performance which is favorable for MEMS applications. In addition, post-Si-etching photography also enables the formation of metal electrodes on free standing SiC membranes to develop electrically-measurable devices. To proof this concept, the authors demonstrate a SiC pressure sensor by applying lithography and plasma etching on released ultrathin SiC films. The sensors exhibit excellent linear response to the applied pressure, as well as good repeatability. The proposed method opens a pathway for the development of self-sensing free-standing SiC sensors.

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Mechanical Sensors

2022

Wide Bandgap Nanowires

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The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Abstract: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

Cited by 222 publications

References 130 publications

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Robust Free‐Standing Nano‐Thin SiC Membranes Enable Direct Photolithography for MEMS Sensing Applications

Mechanical Sensors

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