The plasma oxidation of CF4 in a tubular-alumina fast-flow reactor

Smolinsky, G.; Flamm, Daniel

doi:10.1063/1.325576

Cited by 110 publications

(47 citation statements)

References 15 publications

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“…Oxygen and fluorine atoms were observed by emission spectroscopy. Nevertheless, the conditions of the work of Smolinsky and Flamm 22 , for CF 4 /O 2 , were preferred in order to compare the present simulation with the results of Part 1 1 .…”

Section: Formulation Of the Modelsmentioning

confidence: 98%

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Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Bauerfeldt¹,

Arbilla²

2000

J. Braz. Chem. Soc.

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Neste trabalho é realizada a simulação numérica da decomposição em fase gasosa de SF 6 e misturas de SF 6 /O 2 , na presença de silício. São determinadas as velocidades relativas dos processos individuais, o efeito da incerteza dos parâmetros e os coeficientes de sensibilidade. Os resultados são comparados com dados experimentais encontrados na literatura e resultados calculados previamente para a corrosão do silício, a fim de ajustar os parâmetros do modelo. À semelhança do que acontece com o CF 4 , o principal agente de corrosão é o flúor atômico e a concentração das principais espécies envolvidas depende da composição da mistura. A forma das curvas de sensibilidade segue o formato geral das curvas que representam a velocidade dos processos individuais e a relação entre os coeficientes de sensibilidade calculados para as diferentes etapas de reação é uma medida da contribuição de cada uma ao processo total.In this work, a numerical modelling analysis of the gas-phase decomposition of pure SF 6 and SF 6 /O 2 mixtures, in the presence of silicon was performed. The relative rate of individual processes, the effect of the parameters uncertainties and the sensitivity coefficients were determined. The results were compared with literature experimental data for the plasma etching of silicon and with previous simulated results to adjust the model parameters. As in the CF 4 system, the main etching agent is atomic fluorine and the concentration of the major species depends on the composition of the mixture. The shape of the sensitivity curves follows the general shape of the individual rate curves and the ratio between the calculated sensitivity coefficients is closely related to the contribution of each reaction.

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Section: Formulation Of the Modelsmentioning

confidence: 98%

“…Experimental data from Smolinsky and Flamm 22 , for CF 4 /O 2 mixtures, were used to choose the boundary conditions. In that work, the total gas number density was 1.6 × 10 16 cm -3 (0.5 Torr) and the gas mixture was excited by a 49 W, 13.56 MHz discharge.…”

Section: Formulation Of the Modelsmentioning

confidence: 99%

Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Bauerfeldt¹,

Arbilla²

2000

J. Braz. Chem. Soc.

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“…13,14 However, the concentrations of SF 4 and S 2 F 10 were estimated from data of Heise et al 15 and Wilmshurst and Bernstern. 16 All unreacted F atoms were assumed to be converted into F 2 , 17 and the mole fraction of F 2 was determined using a mass balance. The plasma contact areas at various input powers were determined by multiplying the glow length by the circumference of the reactor.…”

Section: Discussionmentioning

confidence: 99%

“…24 Na 2 CO 3 + SO 2 → Na 2 SO 3 + CO 2 (17) With all units connected in series, an RF plasma process may be an alternative method for treating SF 6 -containing gases.…”

Section: Reaction Productsmentioning

confidence: 99%

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Decomposition of SF₆in an RF Plasma Environment

Shih

Lee

Tsai

et al. 2002

Journal of the Air & Waste Management Association

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Sulfur hexafluoride (SF 6 )-contained gas is a common pollutant emitted during the etching process used in the semiconductor industry. This study demonstrated the application of radio-frequency (RF) plasma in the decomposition of SF 6 . The decomposition fraction of SF 6 [η SF6, (C in -C out )/C in × 100%] and the mole fraction profile of the products were investigated as functions of input power and feed O 2 /SF 6 ratio in an SiO 2 reactor. The species detected in both SF 6 /Ar and SF 6 /O 2 /

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Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

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Plasma processing has emerged as an important technology for the deposition and etching of thin solid films in the manufacture of microelectronic devices. In fact, much of the progress achieved to date in device miniaturization would have been much more difficult without the unique characteristics of plasma processes. It is anticipated that future progress will continue to rely heavily on plasma technology. Although plasma chemical reactors are widely used, a lack of fundamental understanding has resulted in heavy reliance on empiricism in process design and control. The complexities inherent in any chemical reactor are compounded in plasma processing by the presence and active participation of the discharge in both gas phase and surface chemical processes. This has resulted in a technology that is sensitive to many design and operating parameters. A large parameter space gives process engineers flexibility in tailoring process conditions to meet objectives. However, without fundamental insight into the key physical and chemical processes, reactor design and control cannot be based on systematic, rational procedures. The purposes of this review are to introduce chemical engineers to plasma processing practice and phenomenology; to outline the progress made to date in fundamental studies of discharge physics and chemistry; to indicate areas in which chemical engineers must expand their traditional training to participate in plasma processing research; and finally to suggest how established chemical engineering methodology can be applied to plasma chemical reactors. David B. Graves Department of Chemical EngineeringUniversity of California Berkeley, CA 94720Introduction to Plasma Processing History, motivation, and future prospects Molecular gas plasmas are currently widely used in the microelectronics industry for the deposition and etching of thin solid films. Plasma processing is one of many techniques and processes used in the manufacture of integrated circuits (Doane et al., 1982), but the importance of plasma processing to present and future developments in microelectronics, coupled with the growing interest in this technology by chemical engineers, justifies a closer look at industrial practice and the underlying science. Simply stated, microelectronics manufacturing amounts to the growth, patterning, and doping of multiple layers of insulating, semiconducting, and conducting thin films (Hess, 1979). Consequently, deposition and selective etching of films is fundamental to many of the steps involved in this industry. It happens that chemically reacting, weakly ionized gas discharges are particularly powerful tools for depositing and removing thin films.Plasma etching is the more important process industrially, with VLSI (very large scale integration) relying upon the superior pattern transfer fidelity possible with plasma etching (a more or less equivalent term is reactive-ion etching). The utility of plasmas for etching hinges on their ability, under certain conditions, to remove material in the direction p...

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The plasma oxidation of CF4 in a tubular-alumina fast-flow reactor

Abstract: Articles you may be interested inImproved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal-oxide-semiconductor capacitors

Cited by 110 publications

References 15 publications

Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Decomposition of SF₆in an RF Plasma Environment

Plasma processing in microelectronics manufacturing

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The plasma oxidation of CF4 in a tubular-alumina fast-flow reactor

Abstract: Articles you may be interested inImproved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal-oxide-semiconductor capacitors

Cited by 110 publications

References 15 publications

Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma - part 2: SF6 and SF6/O2

Decomposition of SF6in an RF Plasma Environment

Plasma processing in microelectronics manufacturing

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Product

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Decomposition of SF₆in an RF Plasma Environment