The possible structure and electronic structure of zigzag silicon nanotubes doped with group V elements

The electronic and optical properties of silicon doped on arsenic and antimony nanotubes: a first-principles study

“…The incorporation of hydrogen, oxygen, and transition metals doped on III-IV nanotubes has been extensively studied. [26][27][28][29][30][31][32][33] Badehian et al 34 found that doping atoms of silicon transformed single-walled armchair-type phosphorus nanotubes from a direct semiconductor to a metal. Moreover, Qin et al 26 studied silicon nanotubes doped with fifth main group elements, and further electronic structure studies have shown that the addition of a nitrogen atom reduces the bandgap of nanotubes, while phosphorus, arsenic, antimony and bismuth cause silicon nanotubes to change from semiconductors to metals.…”

“…[26][27][28][29][30][31][32][33] Badehian et al 34 found that doping atoms of silicon transformed single-walled armchair-type phosphorus nanotubes from a direct semiconductor to a metal. Moreover, Qin et al 26 studied silicon nanotubes doped with fifth main group elements, and further electronic structure studies have shown that the addition of a nitrogen atom reduces the bandgap of nanotubes, while phosphorus, arsenic, antimony and bismuth cause silicon nanotubes to change from semiconductors to metals. The fourth main group elements, arsenic and antimony, have similar atomic radius and chemical properties to phosphorus or silicon, and can therefore easily form stable nanotube structures.…”