2006
DOI: 10.1002/pip.715
|View full text |Cite
|
Sign up to set email alerts
|

The potential of III‐V semiconductors as terrestrial photovoltaic devices

Abstract: III-V semiconductors, GaAs and in particular InGaP, are used in many different electronic applications, such as high power and high frequency devices, laser diodes and high brightness LED. Their direct bandgap and high reliability make them ideal candidates for the realisation of high efficiency solar cells: in the past years they have been successfully used as power sources for satellites in space, where they are able to produce electricity from sunlight with an overall efficiency of around 30%. Nowadays, the… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
92
0

Year Published

2008
2008
2021
2021

Publication Types

Select...
6
4

Relationship

0
10

Authors

Journals

citations
Cited by 177 publications
(92 citation statements)
references
References 78 publications
(78 reference statements)
0
92
0
Order By: Relevance
“…Concerning PV (and renewable in general), a very long policy planning period is most definitely needed, in order to support the creation of market demand, the assignment of public funding (with 'roof programmes' or feed-in tariffs), and in order to continue a heavy research and development process, [12]. Photovoltaic costs (referring to conventional flat Si panels) depends on the climate and latitude where the panel is installed and they are for large photovoltaic plants.…”
Section: Market Trend In Pv Installationmentioning
confidence: 99%
“…Concerning PV (and renewable in general), a very long policy planning period is most definitely needed, in order to support the creation of market demand, the assignment of public funding (with 'roof programmes' or feed-in tariffs), and in order to continue a heavy research and development process, [12]. Photovoltaic costs (referring to conventional flat Si panels) depends on the climate and latitude where the panel is installed and they are for large photovoltaic plants.…”
Section: Market Trend In Pv Installationmentioning
confidence: 99%
“…G allium arsenide (GaAs), with its high electron mobility and direct bandgap, has been employed in high performance RF electronics and optoelectronics for decades [1][2][3][4] . On the basis of thermodynamics calculation, its bandgap lies at the energy for the theoretical maximum efficiency of single junction (SJ) solar cells and makes it an ideal material for high efficiency solar cells 5 .…”
mentioning
confidence: 99%
“…28 In space applications, where cost is not the major problem, multijunction cells have replaced Si cells. The problem lies in making an economically suitable transition for terrestrial purposes.…”
mentioning
confidence: 99%