The precise role of UV exposure time in controlling the orbital transition energies, optical and electrical parameters of thermally vacuum evaporated Se50Te50 thin film

Elsaeedy, H.I.; Qasem, Ammar; Mahmoud, Mona; Yakout, H.A.; Abdelaal, Said A.

doi:10.1016/j.optmat.2021.111053

Cited by 27 publications

(9 citation statements)

References 61 publications

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“…When the incident radiation energy reaches the forbidden energy value, the absorption value of the material is sharply increased, indicating the optical absorption edge, and the corresponding wavelength at the optical absorption edge known as the cut-off wavelength. 31 Here, the absorption edge appears between 900 and 1200 nm with a more sharp nature and moves toward the higher wavelength as the lasing duration increases by defining the photodarkening nature. Similarly, the absorption behavior of these samples can be measured by the absorption coefficient (α).…”

Section: Journal Of Applied Physicsmentioning

confidence: 92%

“…This is mainly used in determining many optical parameters in amorphous films, which define as the ratio of absorbed radiant energy incident on the semiconductor material with the material distance toward the propagation direction. 31,32 It is also related to the electronic transition occurring between VB and CB, which is determined from the transmittance (T) using the following relationship: 33…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

“…Here, the ratio varies from 1.6 to 1.85, which has been observed in other studies. 31,38,55 Furthermore, "E d " measures the interband transition intensity. Thus, with the increase in exposure time, the interband transitions inside the system enhance.…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

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Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Priyadarshini¹,

Parida²,

Alagarasan

et al. 2023

Journal of Applied Physics

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The current research depicts the laser irradiation-induced effect on the optoelectrical and structural properties of thermally evaporated Bi15In20Se65 thin films with different exposure durations (0, 10, 20, 30, 60, and 90 min). The illumination effect under different lasing times leads to the retention of amorphous nature, indicating the short-range ordering inside the matrix. An improvement in the homogeneous and smooth texture of the film surface even after irradiation has been observed. However, significant optical changes have been noticed with different exposure durations. Transparency decreased with the exposure time, whereas an increment in the absorption coefficient with red shifting in the absorption edge was observed. Broad transparency and less absorption over the infrared region make these films promising for infrared optics such as temperature detection, energy management, monitoring, night vision, etc. Laser illumination allowed bond rearrangements that led to an increase in defect states over the forbidden gap regime and reduced the bandgap from 1.02 to 0.94 eV, confirming the photodarkening nature. This consequently enhanced the Urbach energy and electron–phonon interactions. Both extinction coefficient and refractive index enhanced with lasing duration, indicating an increment in the scattering centers with the lasing duration. The increase in the lasing time results in the increase of interband transitions, which might be due to the increase of carrier concentrations in the system. The non-linear susceptibility (χ(3)) and refractive indices showed enhancement with exposure duration. The observed non-linear refractive index (SI) is 20–30 times greater than silica. This reduction of Eg and enhancement in non-linearity improves the occurrence of two-photon absorption, signifying the potentiality for photonic devices. The hydrophilic nature of laser-irradiated films makes them suitable for applications such as self-cleaning, antifouling, and antifogging as coating materials.

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Section: Journal Of Applied Physicsmentioning

confidence: 92%

Section: Journal Of Applied Physicsmentioning

confidence: 99%

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Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Priyadarshini¹,

Parida²,

Alagarasan

et al. 2023

Journal of Applied Physics

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“…When light photons pass through a multilayer system from the moment they fall until they leave, the multilayer absorption coefficient determines the extent to which they are scattered and absorbed. According to Tauc's famous equation, optical bandgap energy can be extracted from the following formula [47]:…”

Section: Analyzing the Optical Datamentioning

confidence: 99%

Effective role of vacuum annealing in improving structural, optical, and electrical properties of SiO₂/Ag/ZnO multilayers deposited by RF sputtering for optoelectronic applications

Qasem¹,

Hassan²,

Al‐nami³

et al. 2022

Phys. Scr.

Self Cite

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Transparent conductive thin films require multilayer coatings involving metals and dielectrics with high refractive indices. Radiofrequency (RF) magnetron sputtering technique was used to accurately fabricate the SiO2/Ag/ZnO multilayers on the corning glass substrates at 298 K to be used in Concentrating Solar Power (CSP) reflectors, solar cell, and photovoltaic applications. This method optimizes coating processes in a uniform, homogeneous manner, resulting in improved optical and electrical properties, thermal endurance, and long-term stability. The technique was used to synthesize highly translucent and conductive multilayers. The structural, optical, and electrical properties as a function of temperature in the range from 25 °C to 450 °C were detailed. The crystallite size (D cry ), lattice microstrain (ε), dislocation density (δ), and crystallites per unit surface area (N) were calculated. The values of (D cry ) increased while the other parameters decreased with increasing temperature. The linear optical parameters were calculated. The optical results demonstrated that temperature had an impact on the studied multilayers’ optical properties. The dielectric constants, the loss factor, the AC electrical conductivity, the exponential factor, and the activation energy for the dominant conductivity mechanism were all calculated using the capacitance and conductance pathways.

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“…4 is the one that determines the type of optical transformations, whether they are allowed or not, depending on the value of the p-value; since the CdS film is polycrystalline, as shown by X-ray diffraction, the transition will most likely be permissible i.e. a p value of half (p = 1/2) [51][52][53][54]. Fig.…”

Section: Optical Propertiesmentioning

confidence: 99%

Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications

Sebak¹,

Ghalab²,

El-Taher³

et al. 2022

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"The structural and optical properties of CdS window layer at different thicknesses in the range of (100-300 nm) deposited on pre-cleaned glass substrates (CdS/glasses) via the thermal evaporation process are studied in the current work. The structural analysis is done using Rietveld refinement and atomic pressure microscope techniques. The films of CdS/glass showcase a wurtzite behavior. XRD and AFM tests are confirmed that the structural parameters improve as the thickness of the CdS-layer increases. The optical constants (the refractive index n, the extinction coefficient, k and the bandgap energy values are estimated from spectroscopic ellipsometry (SE) via the construction of an optical model. The refractive index of the CdS/glass films increases with the increase of CdS-layer thickness. This, in turn, is due to the rise of the size of the crystal in the thin layers. It is also found that as the thickness of the CdS-layer rises, so does the overall behavior of the extinction coefficient. Additionally, the bandgap energy of the direct transition decreases from 2.45 eV (d=100 nm) to 2.25 eV (d=300 nm). The dark and illumination I-V photovoltaic characteristics of fabricated devices are explored by depositing a p-CdTe thin layer (500 nm) over varying thicknesses of CdS thin films (100- 300 nm) prepared on glass substrates (2 mm) and thus, the Ni/n-CdS/i-AgSe/p-CdTe/Pt heterojunction has been successfully fabricated with an AgSe buffer layer deposited directly on the p-CdTe absorber laryer. The n-CdS window layer is deposited on i-AgSe buffer layer. In dark conditions, based on the dependence of the forward and reverse current-voltage, the essential behavior related to the fabricated diode has been determined. As well, in the illumination case, the open-circuit voltage, the short-circuit current, the fill factor, the power conversion efficiency, (PCE), photoresponsivity, quantum efficiency, dependence of generated photocurrent on the light intensity, dependence of the generated photocurrent on wavelength (λ)for the studied solar cell are computed and discussed."

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The precise role of UV exposure time in controlling the orbital transition energies, optical and electrical parameters of thermally vacuum evaporated Se50Te50 thin film

Cited by 27 publications

References 61 publications

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Effective role of vacuum annealing in improving structural, optical, and electrical properties of SiO₂/Ag/ZnO multilayers deposited by RF sputtering for optoelectronic applications

Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications

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The precise role of UV exposure time in controlling the orbital transition energies, optical and electrical parameters of thermally vacuum evaporated Se50Te50 thin film

Cited by 27 publications

References 61 publications

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Time-dependent laser irradiation-induced kinetics of changes in linear–nonlinear optical properties of Bi15In20Se65 thin films for IR applications

Effective role of vacuum annealing in improving structural, optical, and electrical properties of SiO2/Ag/ZnO multilayers deposited by RF sputtering for optoelectronic applications

Studying the structural, optical spectroscopic ellipsometry and electrical properties of variable-CdS thickness/CdTe for solar cell applications

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Effective role of vacuum annealing in improving structural, optical, and electrical properties of SiO₂/Ag/ZnO multilayers deposited by RF sputtering for optoelectronic applications