The prediction for single event latchup sensitivity parameters of digital CMOS ICs based on its technological features

Rudenkov, A E; Akhmetov, A. O.; Bobrovsky, Dmitry V.; Chumakov, A. I.; Yanenko, Andrey V.; Uzhegov, V.M.

doi:10.1109/miel.2017.8190123

Cited by 8 publications

(2 citation statements)

References 10 publications

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“…In this case, the sensitivity of the device chip to single-event transients will be further enhanced. In addition, the high current at the onset of single-event latching can also affect the normal operation of the device or even directly and severely damage it [9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, an efficient and nonradiation hazard test evaluation method is urgently needed as a supplementary means of heavy ion test technology, which can provide strong support for the evaluation of radiation resistance of devices. Pulsed laser, as a simple, economical, safe and reliable test method without radiation damage, has been widely used in simulating single event effect [11][12][13][14] . It is also the main test method adopted at home and abroad except heavy ion accelerator in recent ten years, and has gradually developed into a favorable supplement to heavy ion single event effect test.…”

Section: Introductionmentioning

confidence: 99%

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Experimental evaluation of sensitivity of high-speed bus transceiver for space communication

Wen¹,

H²,

Mu³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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The bus transceiver is a key device for data caching and transmission in communication systems and a key device for space communication. In this paper, the carrier distribution in the silicon material inside the device is analyzed for a typical highspeed bus transceiver linear device, and the effects of 0.1nJ, 1.0nJ and 10nJ on the carrier concentration and focusing point are analyzed by finite element simulation. The single-particle transient (SET) sensitivity of each functional circuit of the device was analyzed by local scanning of the device chip using a pulsed laser beam. The critical laser energy and sensitive position distribution of the single-event transient of the device were obtained. It is found that the device will show transient pulses when the pulsed laser energy is around 1.3 nJ, single-particle latching phenomenon when the pulsed laser energy is around 1.8 nJ, and single-event latching phenomenon when the pulsed laser energy continues to increase to 5 nJ. This study explores an economical and convenient method of bus transceiver SET evaluation using pulsed laser probe, which is an important reference value for high-speed bus applications in space.

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Section: Introductionmentioning

confidence: 99%