The preparation and characterization of low surface roughness (111) and (100) natural diamonds by hydrogen plasma

Küttel, O. M.; Diederich, L.; Schaller, E.; Carnal, O.; Schlapbach, L.

doi:10.1016/0039-6028(95)80041-7

Cited by 100 publications

(31 citation statements)

References 18 publications

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“…An increase in surface roughness has been shown to decrease the conductance of an Al/Si interface [39] by as much as 50% with a roughness passing from 0 to 10 nm. FIB crosssections in the parts investigated by TDTR suggest that the roughness in our case is maintained below 1.5 nm and a hydrogen plasma treatment has been shown to make the surface smoother rather than rougher in both surface types [40][41][42]. Besides, a roughness difference would probably have an effect on the TBC measured on oxidized samples as well.…”

Section: Thermal Boundary Conductancementioning

confidence: 55%

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Monachon

Weber

2013

Diamond and Related Materials

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Abstract[100] and [111] oriented diamond substrates were treated using Ar:H and Ar:O plasma treatments, and 1:1 HNO 3 :H 2 SO 4 heated at 200˚C. Subsequent to these treatments, an aluminum layer was either evaporated or sputtered on the substrates. The Thermal Boundary Conductance (TBC) as well as the interfacial acoustical reflection coefficient between this layer and the diamond substrate was then measured using a Time Domain ThermoReflectance (TDTR) experiment. For the Ar:H plasma treated surfaces the [111] oriented faces exhibited conductances 40 % lower than the [100] oriented ones, with the lowest measured TBC at 32±5 MWm −2 K −1 . The treatments that led to oxygen-terminated diamond surfaces (i.e. acid or Ar:O plasma treatments) showed no TBC anisotropy and the highest measured value was 230±25 MWm −2 K −1 for samples treated with Ar:O plasma with a sputtered Al layer on top. Sputtered layers on oxygen-terminated surfaces showed systematically higher TBC than their evaporated counterparts. The interfacial acoustic reflection coefficient correlated qualitatively with TBC when comparing samples with the same type of surface terminations (O or H), but this correlation failed when comparing H and O terminated interfaces with each other.

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Section: Thermal Boundary Conductancementioning

confidence: 55%

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Monachon

Weber

2013

Diamond and Related Materials

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“…It was reported that the surface flatness of diamond substrates was improved by hydrogen plasma etching under similar conditions for growth [18][19][20]. Hayashi et al [18] reported that an atomically flat (0 0 1) diamond surface was observed by AFM after hydrogen plasma treatment.…”

Section: Discussionmentioning

confidence: 96%

“…In the literature [18][19][20][21][22], there has been controversy about the surface morphology after hydrogen plasma etching on (0 0 1) diamond. It was reported that the surface flatness of diamond substrates was improved by hydrogen plasma etching under similar conditions for growth [18][19][20].…”

Section: Discussionmentioning

confidence: 99%

Hydrogen plasma etching mechanism on (001) diamond

Watanabe

Ogura

et al. 2006

Journal of Crystal Growth

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“…The fact that our value for H plasma treated diamond is higher than that of Collins et al may be due to traces of Al and Si coming from the machine used, or to the lower roughness of our substrates 44,45 . The roughness would also explain why the sample treated at 900 • C has a higher TBC than the one at 700 • C since hydrogen treatment has been shown to smoothen < 100 > faces of diamond 46,47 .…”

Section: A Substrate Conductivitymentioning

confidence: 99%

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

Monachon

Weber

2013

Journal of Applied Physics

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The effect of diamond surface treatment on the Thermal Boundary Conductance (TBC) between Al and diamond is investigated. The treatments consist in either of the following: exposition to a plasma of pure Ar, Ar:H and Ar:O, and HNO3:H2SO4 acid dip for various times. The surface of diamond after treatment is analyzed by X-ray Photoelectron Spectroscopy, revealing hydrogen termination for the as-received and Ar:H plasma treated samples, pure sp2 termination for Ar treated ones and oxygen (keton-like) termination for the other treatments. At ambient, all the specific treatments improve the TBC between Al and diamond from 23 ± 2 MW m–2 K–1 for the as-received to 65 ± 5, 125 ± 20, 150 ± 20, 180 ± 20 MW m–2 K–1 for the ones treated by Ar:H plasma, acid, pure Ar plasma, and Ar:O plasma with an evaporated Al layer on top, respectively. The effect of these treatments on temperature dependence are also observed and compared with the most common models available in the literature as well as experimental values in the same system. The results obtained show that the values measured for an Ar:O plasma treated diamond with Al sputtered on top stay consistently higher than the values existing in the literature over a temperature range from 78 to 290 K, probably due a lower sample surface roughness. Around ambient, the TBC values measured lay close to or even somewhat above the radiation limit, suggesting that inelastic or electronic processes may influence the transfer of heat at this metal/dielectric interface.

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The preparation and characterization of low surface roughness (111) and (100) natural diamonds by hydrogen plasma

Cited by 100 publications

References 18 publications

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

Hydrogen plasma etching mechanism on (001) diamond

Influence of diamond surface termination on thermal boundary conductance between Al and diamond

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