2014
DOI: 10.1016/j.ceramint.2013.12.003
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The preparation and properties of SiCw/B4C composites infiltrated with molten silicon

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Cited by 25 publications
(12 citation statements)
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“…It was thus demonstrated that the presence of a low quantity of liquid during the SiC sintering at 1970°C for 6 hours was able to control the grain growth kinetic and the microstructure during the dissolution-precipitation transformation of β-SiC to α-SiC by generating a core/rim microstructure [12]. Several recent studies have also evidenced dissolution-precipitation processes during the infiltration of molten silicon into B4C-based materials [13][14][15].…”
Section: Introductionmentioning
confidence: 91%
“…It was thus demonstrated that the presence of a low quantity of liquid during the SiC sintering at 1970°C for 6 hours was able to control the grain growth kinetic and the microstructure during the dissolution-precipitation transformation of β-SiC to α-SiC by generating a core/rim microstructure [12]. Several recent studies have also evidenced dissolution-precipitation processes during the infiltration of molten silicon into B4C-based materials [13][14][15].…”
Section: Introductionmentioning
confidence: 91%
“…The liquid silicon infiltration (LSI) process is a fast and straightforward method to fabricate large‐size dense B 4 C or SiC ceramics with complex shapes at a low temperature of 1600°C . Moreover, a ternary boron carbide based compound B 12 (B, C, Si) 3 was found at the surface of the original boron carbide particles …”
Section: Introductionmentioning
confidence: 99%
“…Boron carbide (B 4 C) ceramic has been widely used in various engineering fields, such as light-weight armor, high-temperature thermoelectric conversion elements, sliding bearings, seal rings, nozzles, and wear parts [1][2][3], due to its excellent properties of high hardness, high strength, low density, good high-temperature stability, high neutron absorption cross section and so on [4][5][6][7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%