The Preparation and Properties of Self-Bonded Silicon Carbide

High-Pressure, High-Temperature Behavior of Silicon Carbide: A Review

“…At ambient pressure the thermal expansion of SiC, particularly of 3C-SiC, has been extensively studied due to its importance in material applications. The thermal expansion has consistently been reported to be between 4 × 10 −6 1/K and 6 × 10 −6 1/K based on both X-ray diffraction and dilatometer measurements [93][94][95][96][97][98][99]. X-ray diffraction measurements taken over a temperature range of 300-1300 degrees K find that a second order polynomial better fits the thermal expansion giving a value of~3.2 × 10 −6 1/K at~300 K and a larger value of 5.1 × 10 −6 1/K at~1300 K [100].…”

Microstructural characterization using orientation imaging microscopy of cellular Si/SiC ceramics synthesized by replication of Indian dicotyledonous plants

“…In fact liquid silicon infiltration (LSI) processing of SiC ceramics, including cellular Si/SiC ceramics, involves two conceptually independent processes of infiltration of liquid Si into channel pores present in the carbonaceous preforms and reaction between incoming Si and C which are not separable in practice at the LSI processing temperatures. 34,35 Capillarity is considered to be the main driving force for liquid infiltration 6,7,34,36 which is also valid in case of penetration of liquid Si into biocarbon preforms. 9,37 For the reaction mechanism, conflicting interpretations are available.…”

“…[1][2][3][4][5] Plants often possess natural composite structures and it has been possible to produce novel SiC based materials by replicating hierarchically designed composite morphology of plant structures. Duplex Si/SiC ceramic composite, an industrially important engineering material, which is conventionally prepared by liquid silicon infiltration (LSI) technique 6,7 involving expensive synthetic raw material powders of desirable quality and complex green shape making, can also be prepared following transformation of bioorganic structures, especially plant structures inherent in wood and stem into ceramic structures. A number of recent publications and patents [8][9][10][11][12][13][14][15][16][17][18] has dealt with different aspects of such processing.…”

The effect of porous carbon preform and the infiltration process on the properties of reaction-formed SiC

“…Reaction-bonded SiC (RBSC) was first developed in the 1950s by Popper as a nuclear fuel cladding material [6,7]. The process involves the infiltration of a porous green compact of silicon carbide (aSiC) and unreacted carbon with liquid silicon by a capillary action process.…”