Proceedings of the 4th 2016 International Conference on Material Science and Engineering (ICMSE 2016) 2016
DOI: 10.2991/icmse-16.2016.89
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The Preparation Methods of Gallium Nitride Powder

Abstract: Gallium nitride (GaN) has attracted much attention for a long time as a promising material for semiconductor device application in the transistors, visible light-emitting sources and high powder diodes. Many investigations are paid to the synthesis method, the process of crystal growth, structure and optical properties of GaN powder and its film. In this article, the preparation methods of GaN powder using the different kinds of raw materials have been reviewed.

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“…These precursor materials are multicomponent compounds [26][27][28][29][30][31][32][33][34][35][36] or toxic substances. [38,39] Traditional chemical methods: dissolving, decomposing or cracking of gallium needs a lot of toxic and harmful solvents or gases. In the process of gallium nitride reaction, catalyst/mineralizer is needed, resulting in a large number of impurities and parasitic reaction substances in the final product, which brings great pollution to the environment.…”
Section: Current Preparation Technologiesmentioning
confidence: 99%
“…These precursor materials are multicomponent compounds [26][27][28][29][30][31][32][33][34][35][36] or toxic substances. [38,39] Traditional chemical methods: dissolving, decomposing or cracking of gallium needs a lot of toxic and harmful solvents or gases. In the process of gallium nitride reaction, catalyst/mineralizer is needed, resulting in a large number of impurities and parasitic reaction substances in the final product, which brings great pollution to the environment.…”
Section: Current Preparation Technologiesmentioning
confidence: 99%