The preparation of silicon carbide and its corresponding properties for electronic packaging applications

Abstract

Traditional packaging materials are suffering from poor high-temperature-using, however, the SiC own ideal coefficient of thermal expansion (CTE) and thermal conductivity (TC), and at the same time, it can be used in high temperatures meeting the requirement of the advanced electronic packaging. But traditionally, SiC is made at a high temperature and with a complex producing process. Some researchers are focused on SiC with some Al additions, but we know that Al will volatilize when the samples are heated over than melt-point, so this method would also strict its applications. Other works had been taken on diamond addition to realize packaging function, but this method needed a high-temperature infiltration process too. In fact, the non-method above was economic or convenient to manufacture in nowadays industry practice. Fortunately, a new way to gain dense SiC at a very low temperature in an open environment had been gotten by our group.