The effect of pressure on the critical temperature T, is studied for YBa,Cu,O,-, compounds prepared under various forming pressures. A systematic decrease in lattice parameters is observed with forming pressure. Resistivity measurements show an increase of the onset temperature T,, with forming pressure.A value of dT,,/dP = (0.070 0.010) x lo-' K/Pa is determined. A new mechanism based on the variation of the interlayer tunneling integral t , is used to analyse the experiment results. L'effet de la pression sur la temperature critique T, est etudiee pour le compose YBa,Cu,O,_, prepare sous une variett de pressions differentes. Une diminution systematique des parametres du rtseau sous l'influence de la pression a ett observke. Les mtsures de resistance montrent que la temperature regnante dans l'echantillon T,, augmente avec la pression. La valeur dT,,/dP 5 (0.070 0.010) x lo-' K/Pa et determinee. Le resultat experimental a ete analyse a l'aide d'un nouvel mecanisme base sur la variation de "tunneling" integral t , entre les couches.