The Principles of Optical Recording

Schwartz, Krut

doi:10.1007/978-3-642-75464-7_2

Cited by 6 publications

(10 citation statements)

References 40 publications

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“…[34] to be inversely related to the degree of the structural randomness in amorphous materials. Figure 3 shows the quantity (aht) 2 Fig. 3 Temperature dependence of the Tauc relation (aht) 1/2 -ht temperatures using the Tauc plot as the intersecting points with the ht-axis at a = 0 after linear fits are made to the (aht) 1/2 versus ht curves in the medium to high absorption region.…”

Section: Temperature Dependence Of the Optical Transportsmentioning

confidence: 99%

“…The most important applications of chalcogenides are now in the field of optics and arise chiefly from either their exhibited infrared transmitting properties or photo-induced effects. They have potential uses in integrated optics, optical imaging, optical data storage, and infrared optics [1][2][3]. Chalcogenide Glasses (Ch-Gs) are disordered semiconductors containing chalcogen elements, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…represents a plot of the quantity (n 2 -1) -1 versus (ht)2 allows with which one can determine the oscillator parameters by fitting a straight line to the experimental points; however E o and E d are determined directly from the slope, (E o E d ) -1 , and the intercept on the vertical axis, (E o E d /d). The figure exhibits linearity in increasing the refractive index with the increase in the incident photon energy, where the mentioned behavior is normally observed in the photon energies ranging from 2.29 to 2.38 eV over all the working temperatures investigated here.…”

mentioning

confidence: 99%

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Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

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Chalcogenide amorphous thin films of the modification (As 2 S 3 ) 0.95 Cu 0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.

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Section: Temperature Dependence Of the Optical Transportsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

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“…Photoinduced effects in glasses are of considerable technological importance, having application in IR lenses, IR laser components, 1-3 optical imaging ͑hologram recording͒, 4,5 and optical mass memories. [6][7][8][9][10] More recently, photosensitive chalcogenide systems have shown potential as photoresists for microlithography in the fabrication of integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Optical characterization of Ag–Sb–Te chalcogenide thin films

Sharma

Bhatnagar

2006

Opt. Eng

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A systematic investigation of Ag x Sb 2͑1−x͒ Te 3͑1−x͒ ͑x = 0.16, 0.18, and 0.20͒ is reported. The optical properties of the material were studied using a UV spectrophotometer. The optical behavior of a material is generally utilized to determine its optical constants such as reflectance, transmittance, and optical band gap E 0 . The value of E 0 is estimated for these samples by measuring the absorption coefficient as a function of the wavelength of light in the range 300 to 1400 nm. Films of different Ag content were studied both before and after annealing. It was concluded that this material is a candidate for phase change optical memory.

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“…1 Of particular relevance to this article is the field of phase-change optical data storage where, typically, the different optical properties, i.e., the reflectivity, of the amorphous ͑a͒ and crystalline ͑c͒ phases of the recording material allow binary data to be encoded. 2 In rewritable systems, each transformation between the two phases is reversible upon irradiation with a single laser pulse of a different fluence. Present commercial phase-change optical recording systems, such as those based on GeSbTe ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

The influence of wavelength on phase transformations induced by picosecond and femtosecond laser pulses in GeSb thin films

Wiggins

Solı́s

Afonso

et al. 2005

Journal of Applied Physics

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Cycling between the crystalline and amorphous phases of 25-nm-thick GeSb films induced by single laser pulses of duration of 100 fs or 20 ps is investigated in the 400-800 nm wavelength range. The time evolution of the phase transformations has been studied with picosecond resolution real-time reflectivity measurements at a probe wavelength of 514.5 nm and also with femtosecond and picosecond pump-probe measurements. Upon picosecond irradiation, three regimes are identified: for wavelengths below ϳ550 nm and above ϳ750 nm, the total time to transform between the crystalline and amorphous phases is of the order of 10-24 ns while in the intermediate wavelength range of 600-750 nm, the transformation time is only ϳ650 ps. Upon 100 fs irradiation, the transformation times are observed to decrease with increasing wavelength with the shortest times of ϳ5 ns for crystallization and ϳ10 ns for amorphization, both occurring at 800 nm. This behavior is discussed in terms of how the wavelength-dependent refractive index of the phases involved influences the initial supercooling of the molten volume and the subsequent resolidification scenario.

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The Principles of Optical Recording

Cited by 6 publications

References 40 publications

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Optical characterization of Ag–Sb–Te chalcogenide thin films

The influence of wavelength on phase transformations induced by picosecond and femtosecond laser pulses in GeSb thin films

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