Ultra-Wideband, Short-Pulse Electromagnetics 3 1997
DOI: 10.1007/978-1-4757-6896-1_6
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The Problems of Picosecond Analog Devices Modeling and Creation

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“…Moreover the experimental curves have the same form. For EL and PL regimes, the quantum efficiency at room temperature is mainly described by ABC-model: , 3 (2) where A, B, and C are the temperature dependent Shockley-Read, radiative, and Auger recombination coefficients, respectively, and n ~ n inj (for linear recombination regime) is the concentration of non-equilibrium carriers in the MQWs.…”
Section: Resultsmentioning
confidence: 99%
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“…Moreover the experimental curves have the same form. For EL and PL regimes, the quantum efficiency at room temperature is mainly described by ABC-model: , 3 (2) where A, B, and C are the temperature dependent Shockley-Read, radiative, and Auger recombination coefficients, respectively, and n ~ n inj (for linear recombination regime) is the concentration of non-equilibrium carriers in the MQWs.…”
Section: Resultsmentioning
confidence: 99%
“…It is used as a threshold element in circuits of exciting nonsinusoidal location antennas and pulse pumping of high-power light-emitting diodes, lasers, and Gunn-effect diodes [2], [3]. The typical switching times of the S-diode from the closed to open state vary from 0.05 to 0.50 ns, and the threshold voltages from 50 to 1000 V. This work is devoted to research and development of laser module in which electrical pumping of commercial laser diode is realized on avalanche pulse S-diode.…”
Section: Introductionmentioning
confidence: 99%