The Properties of Nanosized Silicon Prepared by Plasmochemical and Electrolytic (HCl : HF : C₂H₅OH ) Techniques

Abstract

The structural and optical properties of nanostructured silicon obtained by plasmachemical and electrolytic techniques are presented. For electrolytic etching of silicon electrolyte the chlorine acid was added to standard HF:C 2 H 5 OH electrolyte. It was found that adding of HCl to the electrolyte slows the process of electrochemical etching thus creating conditions for efficient etching and formation of Si-O and Si-H bonds on the formed nanosilicon surface. In the present study the nanosilicon samples were obtained in ultra-high frequency plasmochemical system by means of recondensation of ultradispersed silicon powder in nitrogen flux heated to mean temperature of 3500 K. Morphology of films was found to consist of quantum nanowires of a mean diameter of 2 nm. Results indicating stability of nanosized silicon (NanoSi) under intense laser irradiation are presented. It is demonstrated that substantial increase of NanoSi photoluminescence signal can be attributed to their specific structure, as well as to the SiO 2 thin film formed on the nanocrystalline surface.