The properties of radio frequency sputtered transparent and conducting ZnO:F films on polyethylene naphthalate substrate

Bowen, Arneice; Li, J; Lewis, John S.; Sivaramakrishnan, K.; Alford, TL; Iyer, Shanthi

doi:10.1016/j.tsf.2010.10.019

Cited by 27 publications

(9 citation statements)

References 35 publications

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“…The critical radius of curvature in the 14.5-11mm range observed in GSZO films corresponds to strains in the range of ~ 0.70-0.90%. These are consistent with the typical strains at which micro cracks appear in oxide thin films deposited on flexible substrates [8] . Both the critical radius of the films and the shape of the bending curves are strongly influenced by the wattage of the deposited films as well as the type of the film.…”

Section: Electrical Characteristicssupporting

confidence: 86%

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Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates

Iyer¹

2014

JNMS

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RF-sputtered gallium tin zinc oxide (GSZO) thin films for application in transparent amorphous oxide semiconductors (TAOSs) have been investigated. Morphological, structural, electrical, optical properties and its mechanical robustness have been studied on polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The films deposited on PEN substrates retained amorphous structure even after annealing for 12 hours in vacuum at 200°C. The optical band edge is ~ 3.3eV, greater than ZnO films. Best µ Hall of 3 cm 2 V-1 s-1 have been observed on annealed GSZO films at 200°C. The critical radii of bending improve from 14.5mm to 11mm with decreasing RF power of deposition from 90W to 80W, indicative of its suitability for flexible electronics.

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Section: Electrical Characteristicssupporting

confidence: 86%

“…Morphological, structural, electrical and optical properties of the layers are examined on both 7059 glass and polyethylene naphthalate (PEN) substrates using variety of characterization techniques. The mechanical robustness of the films was compared to our earlier work [8] on the RF sputtered ZnO:F films.…”

Section: Introductionmentioning

confidence: 99%

Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates

Iyer¹

2014

JNMS

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“…The Debye-Scherrer relation:

[ 23 ] was used to calculate the crystallite sizes. Estimation of other crystal variables such as the lattice strain (

), inter-planar distance

, and dislocation density (

) were done and reported in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

et al. 2020

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Nanocomposite films grown by incorporating varying concentrations of Yttrium, a d-block rare-earth ion, into the binary chalcogenide Arsenic selenide host matrix is here presented. Films were grown via the wet-chemical electro-deposition technique and characterized for structural, optical, surface morphology, and photoluminescence (PL) properties. The X-ray Diffraction (XRD) result of the host matrix (pristine film) showed films of monoclinic structure with an average grain size of 36.2 nm. The composite films, on the other hand, had both cubic YAs and tetragonal YSe structures with average size within 36.5–46.8 nm. The fairly homogeneous nano-sized films are shown by the Scanning Electron Microscopy (SEM) micrographs while the two phases of the composite films present in the XRD patterns were confirmed by the Raman shifts due to the cleavage of the As-Se host matrix and formation of new structural units. The refractive index peaked at 2.63 within 350–600 nm. The bandgap energy lies in the range of 3.84–3.95 eV with a slight decrease with increasing Y addition; while the PL spectra depict emission bands across the Vis-NIR spectral regions. Theoretically, the density functional theory (DFT) simulations provided insight into the changes induced in the structure, bonding, and electronic properties. Besides reducing the bandgap of the As2Se3, the yttrium addition has induced a lone pair p-states of Se contributing nearby to Fermi energy level. The optical constants, and structural and electronic features of the films obtained present suitable features of film for IR applications as well as in optoelectronics.

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“…In PV structures, ZnO can replace the commonly used indium tin oxide (ITO) as a transparent electrode. Thin films of ZnO doped with aluminum (ZnO:Al, AZO) or gallium (ZnO:Ga, GZO) obtained by various deposition methods, show a resistivity of the order of 10 −4 Ω·cm and a high transparency [ 22 – 23 ]. Due to these properties and the low costs of ZnO and deposition methods, ZnO:Al films may be used in PV structures as a replacement for expensive ITO layers [ 24 – 26 ].…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

Pietruszka¹,

Witkowski²,

Luka³

et al. 2014

Beilstein J. Nanotechnol.

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SummarySelected properties of photovoltaic (PV) structures based on n-type zinc oxide nanorods grown by a low temperature hydrothermal method on p-type silicon substrates (100) are investigated. PV structures were covered with thin films of Al doped ZnO grown by atomic layer deposition acting as transparent electrodes. The investigated PV structures differ in terms of the shapes and densities of their nanorods. The best response is observed for the structure containing closely-spaced nanorods, which show light conversion efficiency of 3.6%.

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The properties of radio frequency sputtered transparent and conducting ZnO:F films on polyethylene naphthalate substrate

Cited by 27 publications

References 35 publications

Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates

Investigating the Properties of Indium-Free Amorphous Oxide Semiconductor Films for Potential TFT Application on Flexible Substrates

Synthesis and Studies of Electro-Deposited Yttrium Arsenic Selenide Nanofilms for Opto-Electronic Applications

Photovoltaic properties of ZnO nanorods/p-type Si heterojunction structures

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