The properties of Schottky junctions on Nb-doped SrTiO3 (001)

Shimizu, Takashi; Gotoh, N.; Shinozaki, Naoya; Okushi, Hideyo

doi:10.1016/s0169-4332(97)80114-6

Cited by 66 publications

(43 citation statements)

References 22 publications

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“…For the interface between the gold AFM tip and the SrTiO 3 , which consists of an uncontrolled and unknown interface, Φ eff = 1.3 eV and n = 1.3. These properties are in the same range as those reported earlier [14]- [18] In the cases of the macroscopic electrodes and the AFM tip-substrate contact, the structure of the interface is random. The more controlled interfaces will allow properties to be related to interface structure and size.…”

Section: B Fabrication and Testingsupporting

confidence: 83%

Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

Kraya

Bonnell

2010

IEEE Trans. Nanotechnology

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A method to determine the electronic properties at nanointerfaces or of nanostructures by utilizing intermittent contact atomic force microscopy and contact spectroscopy in one system is developed. By combining these two methods, the integrity of the interface or structure is maintained during imaging, while the extraction of the electronic information is obtained with contact spectroscopy. This method is especially vital for understanding interfaces between metal nanoparticles and substrates, where the nanoparticles are not tethered to the surface and can be combined with new and evolving techniques of thermal drift compensation to allow for a larger range of experiments on nanointerfaces and nanostructures in ambient environments. An experimental probe for quantifying the properties of individual interfaces with diameters in the range of 20 to 100 nm is developed, which is based on scanning probe microscopy. KeywordsAtomic force microscopy, metal nanoparticles, nanotechnology, semiconductor-metal interfaces, thermionic emission, transport Abstract-A method to determine the electronic properties at nanointerfaces or of nanostructures by utilizing intermittent contact atomic force microscopy and contact spectroscopy in one system is developed. By combining these two methods, the integrity of the interface or structure is maintained during imaging, while the extraction of the electronic information is obtained with contact spectroscopy. This method is especially vital for understanding interfaces between metal nanoparticles and substrates, where the nanoparticles are not tethered to the surface and can be combined with new and evolving techniques of thermal drift compensation to allow for a larger range of experiments on nanointerfaces and nanostructures in ambient environments. An experimental probe for quantifying the properties of individual interfaces with diameters in the range of 20 to 100 nm is developed, which is based on scanning probe microscopy.

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Section: B Fabrication and Testingsupporting

confidence: 83%

Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

Kraya

Bonnell

2010

IEEE Trans. Nanotechnology

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“…Shimuzu et al have measured the SBHs from various metal/SrTiO 3 junctions and plotted the SBHs as a function of Pauling's electronegativity of the metals. They show that the determined slope parameter S X is about 1, which suggests that the interfacial electronic states are not dominant in the interface charge transfer process at metal/SrTiO 3 interfaces (see discussion in Section 2.1.1) [438].…”

Section: Metal-srtio 3 Interactionsmentioning

confidence: 97%

Interaction of nanostructured metal overlayers with oxide surfaces

Wagner

2007

Surface Science Reports

722

651

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“…The reported data, however, are scattered since the sample preparation condition are quite different among the authors. For example, Shimizu et al pretreated single crystals of Nb-SrTiO 3 by chemical etching and the succeeding ozone cleaning at elevated temperatures, and reported that the barrier was well explained by the Schottky limit [2]. The ozone treatment makes the surface of the sample in a highly oxidized state.…”

Section: Sensitivity To Oxygenmentioning

confidence: 99%

“…E-mail: kawada@tagen.tohoku.ac.jp clarified enough. For donor doped SrTiO 3 , the grain boundary or the surface are known to have much higher resistance than the bulk [1][2][3][4][5][6][7][8][9]. Niobium segregation, Sr vacancy and/or Sr n+1 Ti n O 3n+1 phase formation, or Schottky barrier have been considered in the literatures as the reason of the high resistivity.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Schottky Barrier on n-Type SrTiO3 and Its Sensitivity to Ambient Gases

et al. 2004

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Metal or oxide electrodes (Pt, Au, Ag, (La,Sr)CoO 3 ) were deposited on single crystals of 0.02 mol% Nb doped SrTiO 3 by pulsed laser deposition. Current-voltage and capacitance-voltage responses were measured using three-terminal electrode configuration. Under high oxygen partial pressures, clear rectification behaviors were observed. Diffusion model well explained the current vs. voltage relationship with ideality factors close to unity. The barrier height varied reversibly with oxygen partial pressure, and was almost independent of the electrode materials, which suggested that the Fermi level at the interface was pinned by the surface states. The origin of the surface states was discussed in terms of oxygen adsorption or oxidative formation of metal vacancies around the surface. Chemical interaction between the surface and oxygen and resulting cation rearrangement was concluded to play an important role from the long stabilization time on oxygen partial pressure change. The water vapor pressure dependence of the barrier height was also explained by competitive adsorption of oxygen and water.

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The properties of Schottky junctions on Nb-doped SrTiO3 (001)

Cited by 66 publications

References 22 publications

Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

Interaction of nanostructured metal overlayers with oxide surfaces

High Temperature Schottky Barrier on n-Type SrTiO3 and Its Sensitivity to Ambient Gases

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