the properties of some reactively sputtered metal oxide films

Holland, L.; Siddall, Gillian

doi:10.1016/0042-207x(53)90411-4

Cited by 85 publications

(18 citation statements)

References 12 publications

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“…Many studies6–16 explained the complexity of such a phenomenon and showed the importance of sputtering process control. For this purpose, the optical emission spectroscopy (OES) is a reliable mean to follow the evolution of the discharge properties.…”

Section: Introductionmentioning

confidence: 99%

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Rebib

Tomasella

Thomas

et al. 2007

Plasma Process. Polym.

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The instability phenomenon of RF sputtering of silicon target under ArO2N2 gas mixtures was investigated. The variations of plasma characteristics are correlated to those of the total pressure and the target bias voltage. The transition between the elemental and compound sputtering modes corresponds to an oxidation of the target surface and leads to abrupt changes in the analysed parameters. The influence of nitrogen flow, argon pressure and discharge power on the shape of the hysteresis loop is reported. This study allows us to set up a process calibration method by means of a correlation between the concentration of silicon, oxygen and nitrogen in the plasma and the elemental composition of the deposit.

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Section: Introductionmentioning

confidence: 99%

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Rebib

Tomasella

Thomas

et al. 2007

Plasma Process. Polym.

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show abstract

“…[1,2] However, when the market for transparent conductors exploded, CdO and other toxic Cd-containing oxides were all but abandoned in favor of the nontoxic zinc-, indiumand tin-based oxides. Nevertheless, research into Cd-based TCOs has recently picked up, mainly in response to the development of high efficiency thin-film solar cells which already contain a significant amount of Cd.…”

Section: Introductionmentioning

confidence: 99%

Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory

Mendelsberg¹,

Zhu²,

Anders³

2012

J. Phys. D: Appl. Phys.

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Abstract. Due to their high intrinsic electron mobility, CdO-based materials are gaining interest as transparent conductive oxides. By creating model dielectric functions based on the Drude theory, accurate fits to the measured transmittance and reflectance of CdO and CdO:In thin-films were achieved without using a frequency dependent Drude damping parameter. Difference in the model between undoped and In-doped CdO showed that the Burstein-Moss shift is not the only mechanism which improves the transparency in In-doped samples. Comparing the Drude analysis with Hall measurements revealed a nonlinear relationship between the free-electron effective mass and the carrier concentration, an effect which is caused by the nonparabolicity of the CdO conduction band. Analysis of 50 CdO:In thin-films grown by pulsed filtered cathodic arc showed the nonparabolicity factor was C = (0.5 ± 0.2) eV −1 and the band-edge effective mass was (0.16 ± 0.05)me. Knowledge of the effective mass allows for optical measurements of carrier mobility, which was less than or equal to the Hall measured mobility in these films due to the large electron mean-free-path compared to the grain size.

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“…For the second conductor, it is challenging to use a sol-gel coating, as most transparent conductors require high temperatures (typically C350°C) to process, which may compromise the desirable properties of some of the previously deposited layers. A transparent metal layer (such as thin layer of gold of about 8 to 10 nm [74]) with a surface resistance in a range of about 6 to 10 X/square may be used instead. Such thin layers can be deposited at reasonable process cost using PVD methods.…”

Section: Facilitating the Use Of Low-cost Transparent Conductorsmentioning

confidence: 99%

The Merits of Sol-Gel Processing for Electrochromic Windows: A Commercial Perspective

Agrawal

Cronin

2012

Sol-Gel Processing for Conventional and Alternative Energy

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Electrochromic windows are reversible electrochemical devices. For architectural windows, typical electrochromic device structures comprise of several layers of coatings, where oxidation and reduction of electrode coatings result in actively controllable optical properties by application of electrical potential. These windows reduce the energy cost of a building envelope by dynamically changing the solar transmission through the windows which are used to optimize both the lighting costs and thermal gains with changing outdoor conditions. Commercial electrochromic windows are now becoming available; however, to obtain broader market acceptance the cost/benefit ratio of these windows must be improved. The windows being introduced into the marketplace do not use sol-gel technology in their manufacturing process. Judicious use of solgel technology can assist in obtaining a more favorable cost/benefit ratio. Sol-gel processes offer the opportunity of making the cost attractive, given the unique aspects of the coatings used in this application, which include multiple metal oxide compositions, significant thickness, microstructural requirements, incorporation of mobile ions and the ability to effectively use low-cost transparent conductors.

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the properties of some reactively sputtered metal oxide films

Cited by 85 publications

References 12 publications

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Study of Reactive RF Sputtering Process of Silicon Target Under ArO2N2 Atmospheres

Determining the nonparabolicity factor of the CdO conduction band using indium doping and the Drude theory

The Merits of Sol-Gel Processing for Electrochromic Windows: A Commercial Perspective

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