2015
DOI: 10.1007/s10854-015-3772-y
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The properties of ZnS thin films prepared by rf-magnetron sputtering from nanoparticles synthesized by solvothermal/hydrothermal route

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Cited by 6 publications
(4 citation statements)
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“…The tabulated band gap values of ZnS thin films showed that the increase in particle size due to the presence of different anions during the growth mechanism lower the band gap values due to the quantum size effect. Further, the tabulated band gap values of all ZnS thin films are slightly higher than bulk ZnS, which is probably due to the quantum size effect as the grown polycrystalline thin films' grain size is small enough [10,27].…”
Section: Optical Analysismentioning
confidence: 95%
“…The tabulated band gap values of ZnS thin films showed that the increase in particle size due to the presence of different anions during the growth mechanism lower the band gap values due to the quantum size effect. Further, the tabulated band gap values of all ZnS thin films are slightly higher than bulk ZnS, which is probably due to the quantum size effect as the grown polycrystalline thin films' grain size is small enough [10,27].…”
Section: Optical Analysismentioning
confidence: 95%
“…Among these techniques, radio frequency (RF) magnetron sputtering is a relatively simple and costeffective technique for the preparation of ZnS films [17]. There are only a few reports available on RF-sputtered ZnS films [9][10][11][18][19][20][21][22][23]. Gayou et al prepared ZnS films using the RF magnetron sputtering technique with an RF power of 50 W at different temperatures for a sputtering time of 2 hours.…”
Section: Introductionmentioning
confidence: 99%
“…RF-sputtered ZnS films were also grown on soda lime glass by Haque et al using an RF power of 80 W, and they obtained an amorphous film at room temperature and a zinc-blende crystalline structure in the annealed films [19]. Mendil et al prepared polycrystalline, cubic ZnS films on a glass substrate using the RF magnetron sputtering technique with an RF power of 40 W at both room temperature and a substrate temperature of 200 °C [20]. Mukherjee et al studied the effects of the substrate temperature and baking in a chamber for a long duration on the properties of RF-sputtered ZnS films deposited on glass substrates and silicon wafers [21].…”
Section: Introductionmentioning
confidence: 99%
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