The Pros and Cons of GaN Family of Materials Compared with other Alternatives Regarding Optoelectronic Applications

Nonequilibrium electron–phonon coupling across the interfaces between Al nanofilm and GaN

“…The detail of GaN preparation is described in the previous reports. 3 The Raman spectrum of GaN (0001) is measured using a laser confocal Raman spectrometer (JY; LabRam HR 800), as shown in Fig. 1(a).…”

“…1 These distinctive characteristics collectively position GaN as a highly promising third-generation semiconductor. 2 With such superior advantages, GaN has broad applications in optoelectronic devices, 3 and high electron mobility transistors, 4 especially in high-power electronic fields. 5 With the miniaturization of devices, the heat flux inside the devices increases dramatically, which is a great test of the performance and lifetime of the devices.…”

A photodetector based on p-GaN/N-MoS2 QDs heterojunction with high responsivity

“…However, to improve the performances of photodetectors, fabricating a p-n heterojunction is an excellent method to enhance the separation efficiency of photo-generated electron-hole pairs by providing a built electric field. Meanwhile, GaN, one of the third-generation semiconductors employed with MoS 2 , is an appropriate match for PDs due to its large direct bandgap (3.4 eV), excellent radiation hardness, and high conductivity [19]. As well as some impressive device performances have been exhibited.…”