The quantum confinement effects on the electronic properties of monolayer GeS nanoribbon with tube-edged reconstruction

Abstract

Monolayer α-phase GeS is promising for many novel applications due to its high carrier mobility and suitable bandgap. Recently, the metal and nonmetal zigzag edges of monolayer α-phase GeS have been predicted to undergo universal ZZ(Ge-Tube)/ZZ(S-R) edge reconstruction. Therefore, studies on GeSNR should be reconsidered. In this paper, we study the quantum confinement effects on the electronic properties of edge reconstructed monolayer GeS nanoribbon by using first-principles calculations. As width of the nanoribbon increases from 10 Å to 41 Å, the band gap keeps indirect and linearly decreases from 1.57 eV to 0.87 eV. Robust spatial separation of valence band maximum and conduction band minimum exist in reconstructed GeS nanoribbon with width larger than 19 Å. Moreover, high carrier mobility is expected in the reconstructed GeS nanoribbon. Our results suggest that reconstructed GeS nanoribbon is an important candidate for optoelectronics and photocatalytic.

A Theoretical Study on Adjustment of Negative Differential Resistance Effect in Monolayer GeS via Substitutional Doping

“…[ 13,17–22 ] For example, Kong et al studied the quantum confinement effect on the electronic structure and transport properties of monolayer GeS nanoribbions, and they found that edge‐reconstructed GeS nanoribbons are promising for optoelectronics and photocatalytics. [ 23 ] Mislav et al reported the transport properties of GeS nanoribbons and the ballistic device performance of sub‐4 nm field‐effect transistors. [ 24 ]…”

“…[13,[17][18][19][20][21][22] For example, Kong et al studied the quantum confinement effect on the electronic structure and transport properties of monolayer GeS nanoribbions, and they found that edge-reconstructed GeS nanoribbons are promising for optoelectronics and photocatalytics. [23] Mislav et al reported the transport properties of GeS nanoribbons and the ballistic device performance of sub-4 nm field-effect transistors. [24] Although there are many researches on the electronic structures of GeS, the experimental and theoretical reports related to the NDR effect of monolayer GeS is are not yet researched.…”

Multi-physics coupling in nanoscale spintronics and quantum devices

“…Kong et al [6] studied the effects of edge reconstruction and width on the electronic properties of monolayer GeS nanoribbon (GeSNR) by using firstprinciples calculations. High carrier mobility and robust spatial separation of valence band and conduction band were observed.…”