The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

Miller, D. A. B.; Chemla, D. S.; Damen, T. C.; Wood, Thomas H.; Burrus, C.A.; Gossard, A. C.; Wiegmann, W.

doi:10.1109/jqe.1985.1072821

Cited by 537 publications

(92 citation statements)

References 17 publications

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“…Our findings show that the NEO effect is very important in the interpretation of time-resolved data measured in the presence of electric fields near the band gap. Similar strong nonlinear electro-optic effects are expected in quantum-well structures due to the quantum confined Stark effect 27 or the Wannier-Stark effect. They might open the way to use these structures as THz electro-optic oscillators close to the optical phonon frequencies.…”

Section: ͑3͒mentioning

confidence: 56%

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

et al. 1996

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We report on the time-resolved observation of coherent optical phonons in GaAs by the Franz-Keldysh effect. This effect leads to a modulation of the optical interband transitions with a nonlinear dependence on the macroscopic electric field associated with the coherent phonons. We find that the nonlinear electro-optic effect forms a far more efficient detection mechanism for coherent phonons than the linear electro-optic effect near the band gap.In recent years, the study of coherent phenomena with ultrashort laser pulses has become a matter of growing interest. The use of subpicosecond laser pulses allows a direct observation of coherent vibrations in molecules, 1 phonons in solid-state materials, 2-4 and electronic wave-packet oscillations in quantum-well structures in the time domain. 5 In previous studies the excitation mechanisms and the dephasing of coherent oscillations have been addressed.Recent investigations of coherent phonons in solid-state materials have shown that the excitation results from the impulsive interaction of the material with laser pulses whose durations are shorter than the period of the oscillation. In molecules, coherent vibrations can be excited by impulsivestimulated Raman scattering processes. 1 In narrow-band-gap semiconductors, the strong interband excitation of carriers leads to the excitation of coherent phonons by the impulsive elongation of the bonds. 3 It was found that in these materials the breathing mode of the coherent lattice vibrations modifies the band gap via the deformation potential. 6 In III-V semiconductors, the femtosecond excitation of free carriers results in the impulsive screening of the surface depletion field due to an ultrafast charge separation. This mechanism generates coherent longitudinal optical ͑LO͒ phonons, which are associated with an oscillating macroscopic electric field. 2,7 These field changes have been observed in timeresolved reflectivity measurements via the linear electrooptic effect. 2 In principle, the reflectivity changes induced by coherent phonons in III-V semiconductors arise from the modulation of the optical susceptibility at the phonon frequency, which is expressed by the coupling of the Raman tensor with the coherent motion of the atomic displacement. In a first-order approximation the phonon-induced reflectivity changes ⌬R can be described bywhere is the real part of the optical susceptibility, Q the atomic displacement, and F the macroscopic electric field. The first and second terms at the right-hand side in Eq. ͑1͒ are the deformation potential and the electro-optic contribution, respectively. This first-order Raman tensor determines the usual allowed Raman scattering with its specific polarization selection rules. 8,9 However, in the vicinity of critical points in the electronic band structure, nonlinear effects such as forbidden Raman scattering and electric-field-induced Raman scattering by LO phonons become strongly enhanced. 8,9 The polarization selection rule for these types of Raman tensors is different from that of a...

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Section: ͑3͒mentioning

confidence: 56%

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

et al. 1996

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“…Device Q corresponds to a thresholding or switching device. Device P response is similar to that achieved by a self-electro-optic-effect-device (SEED) [14], Further details, ample than what is presented here as well as its physical implementation, can be found in [15], The study reported here was performed by computer simulation of the OPLC, with the Simulink™ application from Matlab™. It has been considered an ideal response of the non-linear devices.…”

Section: Optical Computing Logic Cellmentioning

confidence: 58%

Analysis of irregular behaviour on an optical computing logic cell

González-Marcos

Martin-Pereda

2000

Optics & Laser Technology

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A new methodology to study irregular behaviours in logic cells is reported. It is based on two types of diagrams, namely phase and working diagrams. Sets of four bits are grouped and represented by their hexadecimal equivalent. Some hexadecimal numbers correspond to certain logic functions. The influence of the internal and external tolerances, namely those appearing in the employed devices and in the working signals, may be analysed with this method. Its importance in the case of logic structures with chaotic behaviours is studied.

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“…For our MQW it was found that E 1S (␣) ϭE b Ϸ10 meV (␣Ϸ2. 3) and, consequently, a b (␣) Ϸ59 Å . Substituting a b (␣) for a b in Eq.…”

Section: Broadening Of the Exciton Resonancementioning

confidence: 99%

“…2 Understanding the basic physics of this saturation is essential for optimizing the performance of electroabsorptive photonics devices. 3 The linear exciton absorption is described by three parameters: the oscillator strength f x , the linewidth ⌫ x and the resonance energy E x . The nonlinearity arises when one or more of these quantities is changed by the influence of photoexcited free and bound electron-hole pairs.…”

Section: Introductionmentioning

confidence: 99%

Exciton dynamics inGaAs/AlxGa
Litvinenko
¹
,
Birkedal
²
,
Lyssenko
³

et al. 1999
Phys. Rev. B
18
0
11
0
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The changes induced in the optical absorption spectrum of a GaAs/Al x Ga 1Ϫx As multiple quantum well due to a photoexcited carrier distribution are reexamined. We use a femtosecond pump-probe technique to excite excitons and free electron-hole pairs. We find that for densities up to 10 11 cm Ϫ2 the saturation of exciton absorption is caused both by a reduction of the oscillator strength and by a broadening of the exciton resonance, which exhibit quite different temporal evolutions. The restoring of the initial value of the reduced oscillator strength is determined by the free-carrier lifetime, which we have measured to be 65 ps, whereas the temporal evolution of the broadening is due to the exciton-exciton interaction and determined by the exciton lifetime, which is found to be 410 ps. We have measured the oscillator strength saturation densities and shown that at low temperature the influence of free electron-hole pairs on the exciton oscillator strength is twice as effective as the influence of other excitons. ͓S0163-1829͑99͒11011-7͔

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The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

Cited by 537 publications

References 17 publications

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

Analysis of irregular behaviour on an optical computing logic cell

Exciton dynamics inGaAs/AlxGa
Litvinenko
¹
,
Birkedal
²
,
Lyssenko
³

et al. 1999
Phys. Rev. B
18
0
11
0
View full text Add to dashboard Cite

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The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

Cited by 537 publications

References 17 publications

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

Time-resolved observation of coherent phonons by the Franz-Keldysh effect

Analysis of irregular behaviour on an optical computing logic cell

Exciton dynamics inGaAs/AlxGaLitvinenko1, Birkedal2, Lyssenko3 et al. 1999Phys. Rev. B180110View full textAdd to dashboardCite

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About

Exciton dynamics inGaAs/AlxGa
Litvinenko
¹
,
Birkedal
²
,
Lyssenko
³

et al. 1999
Phys. Rev. B
18
0
11
0
View full text Add to dashboard Cite