The quasi-ternary system Cu2Se–CdSe–In2Se3 and the crystal structure of the Cu0.6Cd0.7In6Se10 compound

Ivashchenko, I. A.; Gulay, L. D.; Zmiy, O. F.; Olekseyuk, I. D.

doi:10.1016/j.jallcom.2004.10.031

Cited by 7 publications

(3 citation statements)

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“…CsCdInSe 3 ( I ) was first found by discovery synthesis using the alkali metal flux method. − A mixture of Cs 2 Se 3 (0.1859 g, 0.37 mmol), Cd powder (0.0415 g, 0.37 mmol), In metal (0.0849 g, 0.74 mmol), and Se powder (0.0584 g, 0.74 mmol) in the ratio of 1:1:2:2 was loaded into a 9 mm O.D. carbon-coated quartz tube in a N 2 -filled glovebox.…”

Section: Experimental Sectionmentioning

confidence: 99%

CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Malliakas

Peters

et al. 2013

Chem. Mater.

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Two new compounds CsCdInQ 3 (Q = Se, Te) have been synthesized using a polychalcogenide flux. CsCdInQ 3 (Q = Se, Te) crystals are promising candidates for X-ray and γ-ray detection. The compounds crystallize in the monoclinic C2/c space group with a layered structure, which is related to the CsInQ 2 (Q = Se, Te) ternary compounds. The cell parameters are: a = 11.708(2) Å, b = 11.712(2) Å, c = 23.051(5) Å, β = 97.28(3)°for CsCdInSe 3 and a = 12.523(3) Å, b = 12.517(3) Å, c = 24.441(5) Å, β = 97.38( 3)°for CsCdInTe 3 . Both the Se and Te analogues are wide-band-gap semiconductors with optical band gaps of 2.4 and 1.78 eV for CsCdInSe 3 and CsCdInTe 3 , respectively. High-purity polycrystalline raw material for crystal growth was synthesized by the vapor transfer method for CsCdInQ 3 . Large single crystals up to 1 cm have been grown using the vertical Bridgman method and exhibit photoconductive response. The electrical resistivity of the crystals is highly anisotropic. The electronic structure calculation within the density functional theory (DFT) framework indicates a small effective mass for the carriers. Photoconductivity measurements on the as grown CsCdInQ 3 crystals gives high carrier mobility-lifetime (μτ) products comparable to other detector materials such as α-HgI 2 , PbI 2 , and Cd x Zn 1−x Te (CZT).

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Section: Experimental Sectionmentioning

confidence: 99%

CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Malliakas

Peters

et al. 2013

Chem. Mater.

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“…Ternary А І С ІІІ Х 2 , and В ІІ С ІІІ 2 Х 4 , and quaternary А І В ІІ 2 С ІІІ Х 4 compounds with valuable physical properties were found in these systems. The systematic study of the systems Сu 2 Se-HgSe-In 2 Se 3 [1], Ag 2 Se-CdSe-Ga 2 Se 3 [2], Cu 2 Se-CdSe-In 2 Se 3 [3,4] revealed the formation of wide solid solutions of the binary, ternary and quaternary compounds. The layered quaternary compounds ∼Сu 1.4 HgIn 16.6 Se 26.6 , Cu 0.6 Cd 0.7 In 6 Se 10 were reported for the first time in [1,4].…”

Section: Introductionmentioning

confidence: 99%

Phase equilibria in the quasiternary system Ag2Se–CdSe–In2Se3

Ivashchenko¹,

Zmiy²,

Olekseyuk³

2008

Chem. Met. Alloys

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The quasiternary system Ag 2 Se-CdSe-In 2 Se 3 was investigated by differential thermal analysis, XRD, microstructure analysis and microhardness measurements. From the results of the investigation and literature data, six vertical sections, the isothermal section at 820 K and the liquidus surface projection were constructed. The nature and the temperatures of the invariant processes in the Ag 2 Se-CdSe-In 2 Se 3 system were determined. The existence of a quaternary compound, Ag 0.4 Cd 0.4 In 6.3 Se 10 , was established; the compound melts incongruently at 1055 K. Phase diagram / Thermal analysis / X-ray powder diffraction / Ag 2 Se-CdSe-In 2 Se 3

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“…Сполука СuInS 2 володіє конгруентним типом плавлення, а СuIn 5 S 8 утворюється за перитектичною реакцією [1]. [16][17][18].…”

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Phase equilibria in the quasi-ternary system Cu2S-In2S3-CdS

Kozer¹,

Parasyuk²

2009

Chem. Met. Alloys

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The quasi-ternary system Cu2Se–CdSe–In2Se3 and the crystal structure of the Cu0.6Cd0.7In6Se10 compound

Cited by 7 publications

References 2 publications

CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Phase equilibria in the quasiternary system Ag2Se–CdSe–In2Se3

Phase equilibria in the quasi-ternary system Cu2S-In2S3-CdS

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The quasi-ternary system Cu2Se–CdSe–In2Se3 and the crystal structure of the Cu0.6Cd0.7In6Se10 compound

Cited by 7 publications

References 2 publications

CsCdInQ3 (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

CsCdInQ3 (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

Phase equilibria in the quasiternary system Ag2Se–CdSe–In2Se3

Phase equilibria in the quasi-ternary system Cu2S-In2S3-CdS

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CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection

CsCdInQ₃ (Q = Se, Te): New Photoconductive Compounds As Potential Materials for Hard Radiation Detection