“…The record efficiency of 23.35% has been achieved in CIGS solar cells treated with CsF-PDT. For the KF-PDT process, the formation of Cu-deficient Cu–In–Ga–Se compound materials has been reported. ,, In the Cu–In–Ga–Se system, various crystal structures with a Cu-deficient condition exist, such as Cu(In, Ga) 4 Se 7 , Cu(In, Ga) 3 Se 5 , and Cu(In, Ga) 5 Se 8 , depending on the growth temperature and the amount of source material. , The unintentional formation of the Cu-deficient condition on the CIGS surface during CIGS growth was found in 1993 . However, the direct influence of the Cu-deficient phase on photovoltaic devices has not been revealed because a control technique to form a Cu-deficient phase has been lacking, which means that exact characterization is impracticable.…”