2013
DOI: 10.1007/s11669-013-0188-3
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The Quasi-Ternary System Cu2Se-Ga2Se3-GeSe2

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Cited by 24 publications
(13 citation statements)
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“…SnSe 2 belongs to a large class of A IV B VI semiconductors which form a basis of modern IR optoelectronics and have found practical application in injection heterolasers, diodes and photosensors for mid-and far-IR ranges [2]. The investigation of the quasi-binary chalcogenide sections A I C III X 2 -D IV X 2 showed that the formation of the A I C III D IV X 4 compounds is most common [3][4][5][6][7][8][9][10][11]. The crystal structures of these compounds follow interesting trends.…”
Section: Introductionmentioning
confidence: 99%
“…SnSe 2 belongs to a large class of A IV B VI semiconductors which form a basis of modern IR optoelectronics and have found practical application in injection heterolasers, diodes and photosensors for mid-and far-IR ranges [2]. The investigation of the quasi-binary chalcogenide sections A I C III X 2 -D IV X 2 showed that the formation of the A I C III D IV X 4 compounds is most common [3][4][5][6][7][8][9][10][11]. The crystal structures of these compounds follow interesting trends.…”
Section: Introductionmentioning
confidence: 99%
“…The compositional ratio for the single crystal growth was determined by a phase diagram of the pseudo-binary Cu 2 Se-Ga 2 Se 3 system reported in the literature. 11 In order to avoid formation of a Cu-decient undesired phase, we chose a Cuexcess composition (see Experimental) to grow a CuGaSe 2 single crystal; it is likely to grow in a Cu-Ga-Se ux under the present conditions. The Bridgman-type furnace used was composed of three heaters; temperatures of upper, main, and bottom heaters were set to 1020 C, 1010 C and 1000 C, respectively.…”
Section: Crystallographic Propertiesmentioning
confidence: 99%
“…The record efficiency of 23.35% has been achieved in CIGS solar cells treated with CsF-PDT. For the KF-PDT process, the formation of Cu-deficient Cu–In–Ga–Se compound materials has been reported. ,, In the Cu–In–Ga–Se system, various crystal structures with a Cu-deficient condition exist, such as Cu­(In, Ga) 4 Se 7 , Cu­(In, Ga) 3 Se 5 , and Cu­(In, Ga) 5 Se 8 , depending on the growth temperature and the amount of source material. , The unintentional formation of the Cu-deficient condition on the CIGS surface during CIGS growth was found in 1993 . However, the direct influence of the Cu-deficient phase on photovoltaic devices has not been revealed because a control technique to form a Cu-deficient phase has been lacking, which means that exact characterization is impracticable.…”
Section: Introductionmentioning
confidence: 99%