The quest for the SPIN transistor

Zorpette, Glenn

doi:10.1109/6.969357

Cited by 20 publications

(10 citation statements)

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“…pintronics aims to develop electronic devices whose resistance is controlled by the spin of the charge carriers that flow through them [1][2][3] . This approach is illustrated by the operation of the most basic spintronic device, the spin valve [4][5][6] , which can be formed if two ferromagnetic electrodes are separated by a thin tunnelling barrier.…”

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confidence: 99%

Electric field control of spin transport

et al. 2005

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Spintronics aims to develop electronic devices whose resistance is controlled by the spin of the charge carriers that flow through them 1-3 . This approach is illustrated by the operation of the most basic spintronic device, the spin valve 4-6 , which can be formed if two ferromagnetic electrodes are separated by a thin tunnelling barrier. In most cases, its resistance is greater when the two electrodes are magnetized in opposite directions than when they are magnetized in the same direction 7,8 . The relative difference in resistance, the so-called magnetoresistance, is then positive. However, if the transport of carriers inside the device is spin-or energy-dependent 3 , the opposite can occur and the magnetoresistance is negative 9 . The next step is to construct an analogous device to a field-effect transistor by using this effect to control spin transport and magnetoresistance with a voltage applied to a gate 10,11 . In practice though, implementing such a device has proved difficult. Here, we report on a pronounced gate-field-controlled magnetoresistance response in carbon nanotubes connected by ferromagnetic leads. Both the magnitude and the sign of the magnetoresistance in the resulting devices can be tuned in a predictable manner. This opens an important route to the realization of multifunctional spintronic devices.Early work on spin transport in multiwall carbon nanotubes (MWNTs) with Co contacts showed that spins could propagate coherently over distances as long as 250 nm (ref. 12). The tunnel magnetoresistance (TMR) = (R AP − R P )/R P , defined as the relative difference between the resistances R AP and R P in the antiparallel and parallel magnetization configuration, was found to be positive and amounted to +4% in agreement with Jullière's formula for tunnel junctions 4,13 . A negative TMR of about −30% was reported later for MWNTs contacted with similar Co contacts 14 . In these experiments, the nanotubes did not show quantum dot behaviour. It has been shown, however, that single-wall carbon nanotubes (SWNTs) and MWNTs contacted with nonferromagnetic metals could behave as quantum dots and FabryPérot resonators [15][16][17][18][19] , in which one can tune the position of discrete energy levels with a gate electrode. From this, one can expect to be able to tune the sign and the amplitude of the TMR in nanotubes, in a similar fashion as predicted originally for semiconductor heterostructures 11 .In this letter, we report on TMR measurements of MWNTs and SWNTs that are contacted with ferromagnetic electrodes and capacitively coupled to a back-gate 20 . A typical sample geometry is shown in the inset of Fig. 1. As a result of resonant tunnelling, we observe a striking oscillatory amplitude and sign modulation of the TMR as a function of the gate voltage. We have studied and observed the TMR on nine samples (seven MWNTs and two SWNTs) with various tube lengths L between the ferromagnetic electrodes (see the Methods section). We present here results for one MWNT device and one SWNT device.We first discu...

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Electric field control of spin transport

et al. 2005

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“…To move further down in energy consumption, new logic state variable other than charge needs to be explored. Spintronics, which uses spin to represent the logic states which also has the benefit of being non-volatile, holds promise to lower the switching energy [40][41][42][43]. The simulation of spin based devices [44][45] presents another area of expanding usage of TCAD.…”

Section: Beyond Charge Logicmentioning

confidence: 99%

Expanding role of predictive TCAD in advanced technology development

Diaz

2013

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…There has always been great interest in semiconductor devices which use spins in their functioning, as they are predicted to lead to new applications [2,3]. Many device proposals depend on an efficient injection and detection of spin-polarized electrons, preferably electrically from integration point of view.…”

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“…1 Introduction The use of the spin degree of freedom has lead to the development in the recent past of widely used commercial applications [1,2], though mainly in metallic structures. There has always been great interest in semiconductor devices which use spins in their functioning, as they are predicted to lead to new applications [2,3]. Many device proposals depend on an efficient injection and detection of spin-polarized electrons, preferably electrically from integration point of view.…”

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Design of an all‐electrical spin‐injection‐detection device in GaAs

Vanheertum

Dorpe

Borghs

et al. 2006

Phys. Status Solidi (c)

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All electrical spin injection and detection in a semiconductor-based device, preserving the spin of the carriers along the entire path in the semiconductor, has proven to be a challenging task. We show here by means of two-dimensional self-consistent simulations of a lateral device, that the design of the ferromagnetic contacts and the doping profile under these contacts are of critical importance for the depolarization of the carriers along the current path in the semiconductor.

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The quest for the SPIN transistor

Cited by 20 publications

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Electric field control of spin transport

Electric field control of spin transport

Expanding role of predictive TCAD in advanced technology development

Design of an all‐electrical spin‐injection‐detection device in GaAs

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