The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon

Sachenko, A. V.; Gorban, A. P.; Kostylyov, V. P.; Sokolovsky, I. O.

doi:10.1134/s1063782606080045

Cited by 19 publications

(28 citation statements)

References 12 publications

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“…The calculated SC parameters were obtained using the following values: S = 1 cm/s, J SC = 39.5 mA/cm 2 [4,14]. Also, the parameters in the third and the fourth rows of the Tables 1 and 2, obtained using (8) and (9), are somewhat different. However, as seen from these tables, the photoconversion efficiency increases with doping level, whereas the parameters obtained using (8) and (9) differ by not more than 1%.…”

Section: Comparison Of the Experimental And Calculated A-si:h-n-si Himentioning

confidence: 99%

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Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Sachenko¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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(A.V. Sachenko), vkost@isp.kiev.ua (V.P. Kostylyov), n.v.gerasimenko@mail.ru (M.V. Gerasymenko), romkin.ua@gmail.com (R.M. Korkishko), n_kulish@yahoo.com (M.R. Kulish), nslip@kture.kharkov.ua (M.I. Slipchenko), i.o.sokolovskyi@gmail.com (I.O. Sokolovskyi), vvch@isp.kiev.ua (V.V. Chernenko) Abstract. The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley-Read-Hall recombination in the silicon bulk is determined by the deep level of Fe. It has shown that, due to asymmetry of recombination parameters inherent to this level, the photovoltaic conversion efficiency is increased in SC with the n-type base and decreased in SC with the p-type base with the increase in doping. Two approximations for the band-to-band Auger recombination lifetime dependence on the base doping level are considered when performing the analysis. The experimental results are presented for the key characteristics of SC based on a-Si:H-n-Si heterojunctions with intrinsic thin layer (HIT). A comparison between the experimental and calculated values of the HIT cell characteristics has been made. The surface recombination velocity and series resistance are determined from it with a complete coincidence of the experimental and calculated SC parameters' values. Apart from the key characteristics of SC, surface recombination rate and series resistance were determined from the results of this comparison, in full agreement with the experimental findings.

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Section: Comparison Of the Experimental And Calculated A-si:h-n-si Himentioning

confidence: 99%

“…-15 cm 3 /s [8] is the radiative recombination coefficient in silicon, S = S 0 + S d . The rate (inverse time) of the band-to-band Auger recombination (R Auger ) in the n-type silicon is determined using the expression 6 /s [9,10].…”

Section: Fundamental Relations Determining the Silicon Sc Efficiencymentioning

confidence: 99%

Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Sachenko¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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“…are, respectively, the radiative recombination lifetime characterized by the parameter A [22], and the exciton non-radiative recombination lifetime [23]. The latter depends on the parameter n x , whose value in Si at room temperature is 8.2 · 10 15 cm −3 [23].…”

Section: Refmentioning

confidence: 99%

“…where N c , N v , and N x are effective densities of states in the conduction, valence, and exciton bands of silicon, E x is the exciton ground state energy (0.0147 eV in Si), and τ rx is exciton radiative recombination lifetime [22]. The EL intensity in n-type silicon is proportional to A(n 0 +∆p(V )).…”

Section: B Temperature Dependence Of Electroluminescence In Hjscsmentioning

confidence: 99%

“…In addition to exciton radiative recombination, the band-to-band radiative recombination was also accounted for using the expressions from Ref. [22]. It was assumed that E d = 0.044 eV (corresponding to phosphorus level in Si), and the parameters n x , S, τ SRH , and τ Auger had the same values as at T = 300 K. As seen in the figure, the locations of the theoretical and experimental EL intensity maxima agree well with each other.…”

Section: B Temperature Dependence Of Electroluminescence In Hjscsmentioning

confidence: 99%

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Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Sachenko

Bobyl

Verbitskiy

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

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Surface recombination affects both light-to-electricity and electricity-to-light conversion in solar cells (SCs). Therefore, quantitative analysis and reduction of surface recombination is an important direction in SC research. In this work, electroluminescence (EL) intensity and photoconversion efficiency of a set of 93 large-area (239 cm 2 ) a-Si:H/c-Si heterojunction SCs (HJSCs) are measured under AM1.5 conditions at 298 K. The HJSC samples differed only in surface recombination velocity, S, but otherwise were identical. Variation in S was due to the variation of the chemical conditions under which the samples were treated. It is established that EL quantum efficiency, is affected by S much more strongly than photoconversion efficiency, η: namely, the reduction of the latter from 20.5% to 18% due to an increase of S is accompanied by a decrease of the former by more than an order of magnitude. In HJSCs with well passivated surfaces, i.e. low S, EL efficiency reached 2.1%, which is notably higher than the known values in silicon homojunction diodes. For temperaturedependent measurements of EL and dark I-V curves, one of the samples was cut into small-area (1 cm 2 ) pieces. It was found that EL intensity as a function of temperature develops a maximum at T = 223 K. At low temperatures, the current at weak bias is shown to be due to tunneling mechanism. A theoretical model is developed that explains all these findings quantitatively.PACS numbers:

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Influence of excitonic effects on luminescence quantum yield in silicon

Sachenko

Kostylyov

Vlasiuk

et al. 2017

Journal of Luminescence

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Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.

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The radiative recombination coefficient and the internal quantum yield of electroluminescence in silicon

Cited by 19 publications

References 12 publications

Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Analysis of the silicon solar cells efficiency. Type of doping and level optimization

Correlation between Electroluminescence and Photoconversion Efficiency in a-Si:H/c-Si Heterojunction Solar Cells

Influence of excitonic effects on luminescence quantum yield in silicon

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