The Raman spectrum of Ti3SiC2

Amer, Mäher S.; Barsoum, Michel W.; El‐Raghy, T.; Weiss, Isaac; LeClair, Steven R.; Liptak, David

doi:10.1063/1.368849

Cited by 139 publications

(71 citation statements)

References 14 publications

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“…In order to further confirm the phase formation after brazing at variable temperatures, Raman spectrum measured on brazed diamond surface after removing Sn-Ti filler alloy was given in Fig.8. As shown in Fig.8 , TiC peaks at 250, 345, 430 and 609 cm -1 can be clearly observed, which is in a reasonable agreement with previous study using stoichiometric samples [26]. The small shift of TiC peaks is most likely due to varying C contents of TiC in samples brazed at different temperatures, because the Raman peaks is obtained from carbon vacancies in TiC [27].…”

Section: Implications For Integrity Of Brazed Diamond Gritssupporting

confidence: 79%

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Liao

Wang

et al. 2017

International Journal of Refractory Metals and Hard Materials

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In this paper, interfacial reaction between diamond grit and Sn-6Ti alloy was systematically studied at brazing temperatures from 600 to 1030 o C. A thin and uniform layer of scallop-like nano-sized TiC grains was formed after brazing for 30 minutes at 600 o C, and interfacial TiC grains subsequently coarsened as brazing temperature increased to 740 and 880 o C. Strip-like columnar TiC grains in a bilayer structure was further grown as brazing temperature increased to 930 o C. After brazing at 1030 o C, a dense layer of columnar TiC grains were formed. Based on the TEM micrographs of interfacial TiC, the formation and evolution of the growth morphologies of interfacial TiC was believed to be controlled by the diffusion of C flux from diamond grits, which is dependent on the brazing temperatures.

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Section: Implications For Integrity Of Brazed Diamond Gritssupporting

confidence: 79%

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Liao

Wang

et al. 2017

International Journal of Refractory Metals and Hard Materials

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“…There are also three peaks at approximately 260, 420, and 605 cm −1 . These peaks are comparable to those reported by Klein et al and Amer et al 13,14 However, their work suggests that both the broad peaks at approximately 420 and 605 cm −1 are each the product of two separate overlapping peaks. The spectra for the commercial TiC powder, shown in Fig.…”

Section: Raman Spectroscopy Of As-received Ti C and Ticsupporting

confidence: 74%

“…The literature states that stoichiometric TiC has no Raman-active vibrational modes and that Raman scattering in TiC is due to disorder induced by carbon vacancies. 13,14 Klein et al 13 produced Raman spectra of TiC x , where x = 0.97, 0.90, and 0.80, while Amer et al 14 published a Raman spectrum of TiC 0.67 .…”

Section: Raman Spectroscopymentioning

confidence: 99%

Raman spectroscopy as a tool to study TiC formation during controlled ball milling

Lohse

Całka

Wexler

2005

Journal of Applied Physics

116

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Titanium and carbon elemental powder mixtures with compositions of Ti 100−x C x ͑x =50,40,30͒ were milled under a helium atmosphere using a magnetoball mill. For Ti 50 C 50 and Ti 60 C 40 powder mixtures, the combined results of external mill temperature monitoring and x-ray diffraction ͑XRD͒ analysis indicated that, after a specific incubation period, titanium carbide ͑TiC͒ was formed rapidly via a highly exothermic mechanically induced reaction. However, contrary to the current understanding of mechanically induced self-propagating reactions, Raman spectroscopy clearly showed the formation of nonstoichiometric TiC in Ti 50 C 50 and Ti 60 C 40 powders prior to the sudden exothermic event occurring inside the mill. This result has not been reported in previous studies that used only XRD analysis to characterize the as-milled powders. It is now thought that a significant component of the heat generated after the incubation period may be due to a combination of rapid grain growth and/or recrystallization of the preexisting TiC, rather than the direct formation of TiC. When milling Ti 70 C 30 , the reaction to form TiC proceeded gradually as milling progressed.

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“…Five peaks of TiC were observed at 360, 565, 670, 970 and 1075 cm -1 . The first three values show a fairly good agreement with the Raman spectrum of TiC 0.67 [18]. The differences may arise from the fact that the phase composition might not be the same.…”

Section: Chemical Propertiessupporting

confidence: 67%

Examination of nanocrystalline TiC/amorphous C deposited thin films

Oláh

Vereš

Sulyok

et al. 2014

Journal of the European Ceramic Society

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Abstract:The relationship between structural, chemical and mechanical properties of nanocrystalline TiC / amorphous C thin films was studied. Thin films were deposited by DC magnetron sputtering on oxidized silicon substrates in argon at 25 C° and 0.25 Pa. The input power of the carbon target was 150 W, the input power of the titanium target was varied between 15 and 50 W. It was found that all thin films consist of a few nanosized columnar TiC crystallites embedded in carbon matrix. The average size of TiC crystallites and the thickness of the carbon matrix have been found to correlate with Ti content. The mechanical properties of the films have been strictly dependent on their structure. The highest values of the nanohardness (~ 66 GPa) and Young's modulus (~ 401 GPa) were observed for the film with the highest TiC content which was prepared at 50 W of Ti target. The relationship between structural, chemical and mechanical properties of nanocrystalline TiC / amorphous C (TiC/a:C) thin films was studied. Thin films were deposited by DC magnetron sputtering on oxidized silicon (Si/SiO 2 ) substrates in argon at 25 C° and 0.25 Pa. The input power of the carbon target was kept at constant value of 150 W while the input power of the titanium target was varied between 15 and 50 W.It was found that all thin films consist of a few nanosized columnar TiC crystallites embedded in carbon matrix. The average size of TiC crystallites and the thickness of the carbon matrix have been found to correlate with Ti content in the films. The mechanical properties of the films have been strictly dependent on their structure. The highest values of the nanohardness (~ 66 GPa) and Young's modulus (~ 401 GPa) were observed for the film with the highest TiC content which was prepared at the largest input power of Ti target.The recommended keywords are: TiC/a:C, magnetron sputtering, structure, mechanical properties, XPS Looking forward your positive answer. Sincerely yours, Nikolett OlahCover Letter SummaryThe nanocomposite structures will be applied as protective materials or hard coating for multifunctional, industrial and engineering applications [6][7][8]. In previous studies only a few preparation methods for TiC films have been investigated in details. One of them, the vacuum deposition provides great flexibility for manipulating material chemistry and structure, resulting in films and coatings with special properties TiC/a:C thin films were deposited by DC magnetron sputtering at 25 °C in argon atmosphere. The films had a thickness of 400 nm and consisted of nanocrystalline TiC and amorphous carbon phases. The average size of TiC crystallites and the thickness of the amorphous carbon matrix strongly depended on deposition parameters, namely on Ti target power. Films deposited at 15 W Ti power consisted of few nanometers small TiC nanocrystallites embedded in a few ten nanometers thick carbon matrix. The increase of Ti content (with increasing Ti power) resulted in larger TiC nanocrystallites and a thinner carbon spacing between t...

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The Raman spectrum of Ti3SiC2

Cited by 139 publications

References 14 publications

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures

Raman spectroscopy as a tool to study TiC formation during controlled ball milling

Examination of nanocrystalline TiC/amorphous C deposited thin films

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