The random nature of energy deposition in gate oxides

Abstract

AJBTRACT New data is presented on statistical fluctuations in energy deposition across individual gate oxides at 77 K for 13 to 63 MeV protons. A two component model based on microdosimetry theory has been developed to describe proton-induced dose fluctuations. The model considers random factors of the energy deposition process for ( 1 ) direct proton strikes within the volume of interest, and (2) secondary electrons originating outside and entering the volume of interest. Experiment and theory are in good agreement.