The range of light ions in polymeric resists

Abstract

The technique of ion beam lithography coupled with calculations using a Monte Carlo computer program for ion penetration in solids have been used to obtain various range parameters of hydrogen, helium, lithium, beryllium, boron, and carbon ions in polymethyl methacrylate resist. In the experiment, the resist is bombarded with ions and then developed in a 1 : 1 solution of methyl isobutyl ketone and isopropyl alcohol with the developed depth monitored as a function of time. The saturated developed depth is approximated as the mean path length of the ion in the resist. The physical basis of this approximation is discussed. The projected ranges and straggles of the specified ions at energies of 5–300 keV obtained by fitting the experimental data to the total range using a Monte Carlo program are presented. These range data can be used as guidelines to determine the resist mask thickness for ion implantation and for choosing resist thickness in ion beam lithography.

Modified PMMA-Polymers for Masks in Ion Beam Lithography

“…They represent two different situations : 2 . when it is much greater; It,(Li+) = 610nm for 50 keV [ 3 ] . Fig.…”

Range of boron ions in polymers: A SIMS study

“…These values are in good agreement with other SIMS data that appear in the literature. 11 The intercept of the lines with the abscissa, represent the polymer thickness at which the peak (solid line) and the peak plus sigma (dashed line) of the distribution coincide with the interface. Since these are the values of interest, a least-squares fit to a straight line was done in the second linear region to determine the intercepts.…”