The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted si

Brawn, JR

doi:10.1080/00337577708237457

Cited by 33 publications

(2 citation statements)

References 21 publications

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“…A dry 02 anneal at 750~ for 60 min did not show any difference in junction depths, which is consistent with the SIMS results. In addition to end-ofrange dislocations, a surface polycrystalline Si layer has been found by Williams et al (22) after recrystallization of amorphous layers produced by ion implantation. Differential junction staining of B-implanted samples was not possible because the substrates were p-type B-doped silicon wafers.…”

Section: Comparison Of the Effects Of Inert And Oxidizing Ambients--mentioning

confidence: 93%

“…The amorphous layer recrystallizes via solid-phase epitaxy upon annealing. In addition to end-ofrange dislocations, a surface polycrystalline Si layer has been found by Williams et al (22) after recrystallization of amorphous layers produced by ion implantation. Also, a layer with excess vacancies has been observed at the surface by multiple crystal x-ray diffraction studies after regrowth of amorphous Si layers (23).…”

Section: Effect Of Oxidation On P Diffusion--approximately 600amentioning

confidence: 93%

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The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low‐Temperature Processing

Kim

Massoud

Fair

1990

J. Electrochem. Soc.

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Annealing ambient effects on dopant diffusion in silicon were investigated during low-temperature processing. BF2, P, and As were implanted at room temperature in (100) silicon through a 140A thick layer of SiO2 with the ion beam normal to the wafer surface, and the implant dose and energy sufficient to amorphize the surface layer. After low-temperature furnace annealing, ion-implanted B, P, and As in Si show a transient enhanced diffusion regime in both inert and oxidizing ambients. It was expected that point-defect generation during the annealing of implant damage would dominate the transient enhanced diffusion process regardless of the ambient. However, deeper P junctions were observed for implants annealed in an oxidizing ambient when the surface oxidation consumed more than 50A of Si. We propose that stress in the surface layer plays an important role in the diffusion of high-dose P implants. The effect of oxidation is to consume this highly stressed surface layer which can suppress the P diffusion in the tail region. The role of the surface stress layer in P diffusion will be discussed and profile simulations using this model will be presented.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.171.57.189 Downloaded on 2015-06-13 to IP

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Section: Comparison Of the Effects Of Inert And Oxidizing Ambients--mentioning

confidence: 93%

Section: Effect Of Oxidation On P Diffusion--approximately 600amentioning

confidence: 93%

The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low‐Temperature Processing

Kim

Massoud

Fair

1990

J. Electrochem. Soc.

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Laser annealing of Pb-implanted silicon

Fóti¹,

Rimini²,

Campisano³

1978

Phys. Stat. Sol. (a)

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The effect of irradiation with a Q‐switched ruby laser pulse of 50 ns duration on Pb‐implanted Si〈111〉 substrates is investigated by MeV He Rutherford backscattering in glancing geometry. The amount of implanted Pb atoms accumulated at the crystal surface after laser irradiation increases with laser power density in the range 15 to 100 MW/cm2. Reordering of the implanted layer takes place simultaneously with Pb accumulation on surface for all the investigated fluences. This behavious differs from thermal aging where the Pb profile is independent of temperature in the range 600 to 800°C and the substrate reordering is inhibited mainly at fluences higher than 1015 cm−2. The differences between thermal and laser annealing could be ascribed to a quasi liquid transition of the as‐implanted amorphous layer during laser irradiation. An interpretation along this line is presented.

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