ABSl-R4CfThe small-ngnal impedance of electrolyte/insulator/stliux structures is partly determined by the propeties of the insulator/electrolyte mterface. A theoretical model for thrs mterfacial tmpedance IS derived Two parallel contnbutrons are involved: the double-layer capacitance, for which a Gouy-Chapman-Stem model is adopted, and a branch contaming the capaatance related to the surface reactions with H+ and OH-eons from the electrolyte These surface reactions cause the total interfacial impedance to be very low for msulators wrth a high surface reactivtty such as, for instance, AlaO, or TaaOs_ . In these cases, the measurements can be performed because both sides of the interface are conducting for the ac signals used. Most of the present knowledge of the electrical double layer stems frcm the study of these two systems. An important aspect of the silver iodide system is that its double-layer properties have been studied in two different ways: the measurement of charge on colloid suspensions [3], from which the double layer capacitance can be derived, and dtrect measurement of this capacitance with Ag/AgI solid electrodes, which confirms the value derived by the indirect method [2].Such a confirmation does not yet exist for the SiOJelectrolyte interface where H+ and OH-ions are potential determinin g ions (pdi). The only values of the double-layer capacitance on SiO, mentioned in the literature have been calculated 0022-0728/83/$03 00 0 1983 Eke&r !Zequola SA