The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOI CMOS transistors

“…These results are in agreement with the prevailing (classical) theory of pMOSFET degradation at maximum I G stress condition and have been analyzed and interpreted (e.g. [31]): in the forward mode, the trapped electrons reduce the potential change in the drain region and thus lower the channel electric field and consequently the substrate current. In the reverse mode on the other hand, the charges reduce the effective channel length of the device resulting in an increase of the field strength and thus in an elevated substrate current.…”

Improved Hot Carrier Reliability in Strained-Channel NMOSFETS with TEOS Buffer Layer

“…Although the physical mechanisms and characteristics of hot electron degradation have been extensively studied [3,4], there seems to be very few works investigating the impact of SiN capping layer and the associated deposition process on the hot carrier reliability of the strained devices. In this work, we investigate this issue and propose the incorporation of a thin TEOS buffer layer to improve the reliability performance.…”

Impacts of SiN-Capping Layer on the Device Characteristics and Hot-Carrier Degradation of nMOSFETs

“…The physical mechanisms and characteristics of hot-electron degradation have been extensively exam- ined [8], [9]. The degradations in terms of threshold-voltage shift (∆V th ), drain-current degradation (∆I DS ), and transconductance degradation (∆G m ) are observed in the accelerated stress test.…”