2015
DOI: 10.1002/adfm.201403773
|View full text |Cite
|
Sign up to set email alerts
|

The Relationship between Structural and Electrical Characteristics in Perylenecarboxydiimide‐Based Nanoarchitectures

Abstract: The controlled assembly of the prototypical n-type organic semiconductor N,N′-1H,1H-perfl uorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2 ) into ordered nanoarchitectures and the multiscale analysis of the correlation between their structural and their electrical properties is reported. By making use of the Langmuir-Blodgett (LB) technique, monolayers of PDIF-CN 2 arranged in upright standing molecular packing on different substrates are formed. Postdeposition thermal treatment makes it possible to trigger … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
33
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 25 publications
(34 citation statements)
references
References 64 publications
1
33
0
Order By: Relevance
“…The field‐effect transistors exhibit a reasonable electrical performance, demonstrating that the LB method is an ideal approach to fabricate 2D n‐type molecular crystals. Furthermore, this paves the way toward the applications of 2D crystals in downscaled organic electronic devices …”
Section: Solution‐based Techniques For Preparing 2dmcsmentioning
confidence: 95%
“…The field‐effect transistors exhibit a reasonable electrical performance, demonstrating that the LB method is an ideal approach to fabricate 2D n‐type molecular crystals. Furthermore, this paves the way toward the applications of 2D crystals in downscaled organic electronic devices …”
Section: Solution‐based Techniques For Preparing 2dmcsmentioning
confidence: 95%
“…The identical character of the substrate temperature for growth of OPV and organic LED and FET from small-molecule OSC was demonstrated by growth, structure, and anisotropic optical properties of difluoroanthradithiophene thin films [226]. The prototypical n-type OSC PDIF-CN2 was assembled into well-ordered nanoarchitectures by LB technique and a multiscale analysis of the correlation between their structural and electrical properties was performed using XRR and GID [227]. LB-deposited monolayers of PDIF-CN2 are arranged in upright standing molecular packing on different substrates.…”
Section: Polymer Photovoltaicsmentioning
confidence: 99%
“…The hole mobility of the monolayer FET can reach 0.014 cm 2 V −1 s −1 with an average µ h of 0.008 cm 2 V −1 s −1 , which is among the highest charge mobility reported for FETs with ultrathin films prepared with Langmuir technique. [29][30][31][32][33][34][35] Moreover, the monolayer FET exhibits relatively high I on/off (10 4 -10 6 ). µ h increased to 0.015 and 0.02 cm 2 V −1 s −1 for FETs with bilayer and threelayer ultrathin films, respectively.…”
Section: Thin Film Field-effect Transistorsmentioning
confidence: 99%
“…In fact, Langmuir technique was successfully utilized to transfer monolayer thin films of organic and polymeric semiconductors onto the substrates to fabricate FETs. [29][30][31][32][33][34][35] For instance, Yli-Lahti and co-workers first reported FETs with Langmuir-Blodgett (LB) films of poly(3-hexylthicphene)/ arachidic acid, but the resulting FETs exhibited rather low charge mobilities. [34] This is probably due to the fact that the LB films contain arachidic acid which is required for the formation of the polymer LB films at air-water interface.…”
mentioning
confidence: 99%