The remote roughness mobility resulting from the ultrathin SiO2 thickness nonuniformity in the DG SOI and bulk MOS transistors

Walczak, J.; Majkusiak, B.

doi:10.1016/s0167-9317(01)00633-5

Cited by 11 publications

(11 citation statements)

References 8 publications

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“…The mobility model is crucial to nanoscale device simulation. In this simulation a field dependent mobility is adopted [11,27]. However, different surface mobility models lead to different drain current also in the linear region.…”

Section: Resultsmentioning

confidence: 99%

A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions

2004

Nanotechnology

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In this paper a unified quantum correction charge model for nanoscale single-and double-gate MOS structures is presented. Based on the numerical solution of Schrödinger-Poisson equations, the developed quantum correction charge model is mainly optimized with respect to (i) the left and right positions of the charge concentration peak, (ii) the maximum of the charge concentration, (iii) the total inversion charge sheet density, and (iv) the average inversion charge depth, respectively. For nanoscale single-and double-gate MOS structures, this model predicts inversion layer electron density for various oxide thicknesses, silicon film thicknesses, and applied voltages. Compared to the Schrödinger-Poisson results, our model prediction is within 2.5% of accuracy for both the single-and double gate MOS structures on average. This quantum correction model has continuous derivatives and is therefore amenable to a device simulator.

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Section: Resultsmentioning

confidence: 99%

A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions

2004

Nanotechnology

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“…Development of nanoscale metal-oxide-semiconductor field effect transistors (MOSFETs) has recently been of great interest, in particular for the double-gate MOSFETs shown in Fig. 1 [3,4,15,16,[18][19][20]24,25]. As these semiconductor devices are further scaled into the nanoscale regime (device channel length < 100 nm), it becomes extremely necessary to consider quantum mechanical effects when performing device modeling and simulation [1,3,9,15,16,18,19,22,24].…”

Section: Introductionmentioning

confidence: 99%

A Parallel Adaptive Finite Volume Method for Nanoscale Double Gates Mosfets Simulation

Chen

2003

Computational Methods in Sciences and Engineering 2003

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We propose in this paper a quantum correction transport model for nanoscale double-gate metal-oxidesemiconductor field effect transistor (MOSFET) device simulation. Based on adaptive finite volume, parallel domain decomposition, monotone iterative, and a posteriori error estimation methods, the model is solved numerically on a PC-based Linux cluster with MPI libraries. Quantum mechanical effect plays an important role in semiconductor nanoscale device simulation. To model this effect, a physical-based quantum correction equation is derived and solved with the hydrodynamic transport model. Numerical calculation of the quantum correction transport model is implemented with the parallel adaptive finite volume method which has recently been proposed by us in deep-submicron semiconductor device simulation. A 20 nm double-gate MOSFET is simulated with the developed quantum transport model and computational technique. Compared with a classical transport model, it is found that this model can account for the quantum mechanical effects of the nanoscale double-gate MOSFET quantitatively. Various biasing conditions have been verified on the simulated device to demonstrate its accuracy. Furthermore, for the same tested problem, the parallel adaptive computation shows very good computational performance in terms of the mesh refinements, the parallel speedup, the load-balancing, and the efficiency.

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“…This gives rise to potential and charge fluctuations responsible for extra carrier scattering. [7][8][9][10][11][12] In this picture, we expect stronger scattering from the SiO 2 /HfO 2 interface than from the HfO 2 /Metal gate interface, since the latter is usually much farther from the channel and is efficiently screened by the HfO 2 layer. This will indeed be confirmed by our numerical simulations on FDSOI devices.…”

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confidence: 99%

“…[7][8][9][10] The models were later extended to HfO 2 and HfO 2 /IL gate stacks. 11,12 However, the different interfaces were assumed uncorrelated, and surface roughness (SR)/remote surface roughness modeled as two independent mechanisms.…”

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confidence: 99%

“…It is, likewise, proportional to the Fourier transform of the auto-covariance function F δ (R) = δ(r)δ(r + R) of these fluctuations. [7][8][9][10][11][12] The third (and fourth complex conjugate) terms are "cross-correlated" contributions to RSR scattering. They are proportional to ∆ * (q)δ(q), which is the Fourier transform of the correlation function G(R) = ∆(r)δ(r + R) between the SR profile at the Si/SiO 2 interface and the IL thickness fluctuations.…”

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confidence: 99%

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Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ/SiO2 gate stacks

Niquet

Duchemin

Nguyễn

et al. 2015

Applied Physics Letters

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We investigate remote surface scattering (RSR) by the SiO 2 /HfO 2 interface in Fully-Depleted Silicon-onInsulator (FDSOI) devices using Non-Equilibrium Green's Functions. We show that the RSR mobility is controlled by cross-correlations between the surface roughness profiles at the Si/SiO 2 and SiO 2 /HfO 2 interfaces. Therefore, surface roughness and remote surface roughness can not be modeled as two independent mechanisms. RSR tends to enhance the total mobility when the Si/SiO 2 interface and SiO 2 thickness profiles are correlated, and to decrease the total mobility when they are anti-correlated. We discuss the implications for the high-κ/Metal gate technologies.High-κ materials such as HfO 2 have been introduced in Metal-Oxide-Semiconductor Field Effect Transistors in order to keep a tight electrostatic control over short channels while limiting gate leakage currents. 1 They usually remain separated from the channel by a thin interfacial layer (IL) of SiO 2 . Yet the introduction of high-κ materials leads to a systematic decrease of carrier mobilities, which is very significant at weak inversion densities, but can persist in the strong inversion regime. 2 Different scattering mechanisms have been put forward to explain this degradation. There is no doubt that charges trapped at the SiO 2 /HfO 2 interface or in the HfO 2 layer (Remote Coulomb scattering (RCS)) make a major contribution at weak inversion. 3-5 Remote scattering by polar optical phonons (RPH) in HfO 2 is also a serious candidate, especially in thin IL devices. 5,6 Much less attention has been given up to now to scattering by roughness at the SiO 2 /HfO 2 interface or equivalently by IL thickness fluctuations. At variance with RCS, this mechanism, known as remote surface roughness (RSR) scattering, is expected to be dominant in the strong inversion regime.RSR has first been investigated with semi-classical Kubo-Greenwood approaches in a different context, namely roughness at the SiO 2 /Gate interface in polysilicon gate technologies. 7-10 The models were later extended to HfO 2 and HfO 2 /IL gate stacks. 11,12 However, the different interfaces were assumed uncorrelated, and surface roughness (SR)/remote surface roughness modeled as two independent mechanisms.In this letter, we use Non-Equilibrium Green's Functions (NEGF) methods 13,14 to investigate RSR in the latest Fully-Depleted Silicon-on-Insulator (FDSOI) thinfilm technologies with high-κ/Metal gates. We show that RSR scattering is dominated by roughness at the SiO 2 /HfO 2 interface, indeed prevails at large carrier densities (at variance with RCS), and decreases exponentially with IL thickness. More importantly, we demona) Electronic mail: yniquet@cea.fr strate that the RSR correction is controlled by crosscorrelations between the Si/SiO 2 and SiO 2 /HfO 2 interfaces. SR and RSR can not, therefore, be modeled as two independent mechanisms. RSR is beneficial when the Si/SiO 2 interface and the IL thickness profiles are correlated, and detrimental if they are in anti-correlated.Let us firs...

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The remote roughness mobility resulting from the ultrathin SiO2 thickness nonuniformity in the DG SOI and bulk MOS transistors

Cited by 11 publications

References 8 publications

A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions

A unified quantum correction model for nanoscale single- and double-gate MOSFETs under inversion conditions

A Parallel Adaptive Finite Volume Method for Nanoscale Double Gates Mosfets Simulation

Remote surface roughness scattering in fully depleted silicon-on-insulator devices with high-κ/SiO2 gate stacks

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