The Renaissance and Golden Age of Epitaxial Dry Germanene

Abstract

Germanene, as an artificial graphene-like near room temperature topological insulator, compatible with ubiquitous silicon technology, is potentially the most promising artificial Xene for ultra-scale nanoelectronics. Here, we follow its emergence and development when prepared in situ under ultra-high vacuum in clean and controlled conditions by dry epitaxy on prominent metal surfaces (e.g., aluminum, silver, gold). We describe its predicted electronic properties and its birth in 2014, even if it was just a renaissance, as it was only understood after 51 years after an undeciphered birth certificate lost in oblivion. We emphasize the lifting of germanene flakes from an aluminum template with the tip of a scanning tunneling microscope, and their repositioning to form bilayer germanene with Bernal stacking. Finally, we discuss the growth of monolayer germanene in a single phase harboring Dirac fermions, following a bottom-up synthesis strategy by segregation on a gold thin film in epitaxy on a germanium support.

Wet‐Chemical Synthesis of Elemental 2D Materials

“…[16][17][18][19][20] Till now, many Xenes have been either experimentally synthesized or theoretically predicted from diverse element groups. As shown in Table 1, these elements include group 13 elements (borophene, aluminene, indiene, gallenene), group 14 elements (graphene, silicene, germanen, stanene, plumbene), [21][22][23][24][25][26][27] group 15 elements (phosphorene, arsenene, antimonene, bismuthene), [28][29][30][31][32] group 16 elements (selinene, tellurene) [6,33,34] , group 17 elements (iodinene). [35] It is worth noting that numerous analogues, which display corrugated, puckered, or buckled structures resembling graphene, have undergone comprehensive theoretical examinations.…”