The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity

Abstract

A dual-mode film bulk acoustic resonator (DM-FBAR) temperature sensor modulated by different phosphorous-doped silica insertion layers was reported in this paper. The relative drift of the second and third resonance peaks of FBAR could improve the temperature sensitivity through the dual-mode beat frequency calculation method. The temperature sensitivity can be regulated by different the PH 3 doping flow in the SiO 2 insertion layer. Among the fabricated devices, FBAR with a SiO 2 insertion layer doped 4 sccm PH 3 has the highest temperature sensitivity of 64.8 kHz • C −1 . It is discovered that the greater the Young's modulus of the insert film changes with temperature, the higher the temperature sensitivity of DM-FBAR device. Therefore, an important technical means to improve the performance of DM-FBAR devices is using the material whose Young's modulus is more sensitive to temperature in the future.

Current Status and State-of-Art Developments in Temperature Sensor Technology

“…However, the sensitivity parameter of the FBAR temperature sensor is critical, as demonstrated by the slow temperature stability achieved within 110 s and an accuracy of 0.015°C when the resonator temperature was controlled at 75°C and the ambient temperature was 25°C. To improve the temperature sensitivity, Zhao [26] proposed a dual-mode thin film bulk acoustic resonator (DM-FBAR) temperature sensor that uses different phosphorus-doped silica insertion layers. The FBAR with a SiO 2 insertion layer doped with 4 sccm PH3 achieved a high-temperature sensitivity of up to 64.8 kHz/°C (resonant frequency magnitude of GHz).…”

A Radiofrequency Threshold Sensing System Using a Hf0.5Zr0.5O2 Device and a Microacoustic Piezoelectric Resonant Sensor

“…Over the last few years, advancements in micro and nanotechnology have generated new avenues to enhance the performance of the existing electronic sensing systems. For instance, a variety of RF micro and nanoelectromechanical (MEMS/NEMS) devices has emerged [7], [14]- [24], allowing to sense a wide pool of parameters-of-interest (PoIs) with an exceptionally high sensitivity compared to what achievable by the existing electromagnetic counterparts. In addition, nmscale ferroelectric (FE) memory devices with reduced programming voltages are now available [25]- [27].…”

Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

“…In recent years, the development of wireless communication systems is toward high frequency band and high stability, in which, the acoustic devices used in the systems must be small size, low cost and high stability [1,2]. The film bulk acoustic resonators (FBARs) existed lower insertion loss, higher operating frequency and wider frequency band which were better than those of surface acoustic wave (SAW) devices [3][4][5][6][7]. The FBAR device is constructed by a piezoelectric layer sandwiched between the top and bottom electrodes.…”