The resistance switching of BiFeO3-Nia/b/La0.7Sr0.3MnO3 was enhanced by regulating the ferroelectric polarization

Ren, Xixi; Tan, Guoqiang; Ao, Di; Liu, Chenjun; Ren, Huijun; Xia, Ao; Liu, Wenlong

doi:10.1016/j.ceramint.2022.01.027

Cited by 1 publication

(1 citation statement)

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“…Due to the distinct polarization state in the ferroelectric BFO thin film, the polarization directed memristor was also developed. By using the polarization state to change the interface barrier height, the multi-state RS behavior can be obtained [16,[20][21][22]. Furthermore, it has been investigated that the RS effect can be modulated by the redistribution of V O in BFO thin film [20], which provide us a module system to develop the three-state RS effect on the fabricated sample.…”

Section: Introductionmentioning

confidence: 99%

Three-state resistive switching effect in BiFeO₃ thin films

Yang¹,

Zhang²,

Yang³

et al. 2022

Phys. Scr.

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Resistive switching (RS) memristor has been widely used in the in-memory computation systems. Due to the strong information processing capability and low area cost of the ternary logic, the development of the three-state RS memristor was promoted. Here, we demonstrate a three-state RS phenomenon on Pt/BiFeO3/SrRuO3 structure. After applying a positive voltage to the thin film for a period, an abrupt RS effect occurs, where the three-state RS behavior can be obtained. By analyzing the conduction mechanisms of the current-voltage curves and the behavior of the capacitance-voltage curves, the three-state storage capability of the memristor can be ascribed to the movement of oxygen vacancies and the trapping/detrapping of charge carriers at the interface. The ternary OR logic gate was also designed with three steps by using only one memristor.

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