The response of a NiOx thin film to a step potential and its electrochromic mechanism

New insight into electrochemical-induced synthesis of NiAl2O4/Al2O3: Synergistic effect of surface hydroxyl groups and magnetism for enhanced adsorptivity of Pd(II)

“…3C) confirmed that both Ni/Al 2 O 3 -E and Ni/Al 2 O 3 -PM possess peaks of Ni 2+ and satellite, which are located at 854.4 and 860.5-862.5 eV, respectively [27]. Significantly, a peak belonging to NiAl 2 O 4 was also seen in the Ni/Al 2 O 3 -E at 856.1 eV, while Ni/Al 2 O 3 -PM showed a peak at 852.1 eV, which corresponded to Ni 0 [28]. Thus, it could be stated that the introduction of Ni into Al 2 O 3 via the physical mixing method obviously produced Ni 0 and NiO [29], while the electrolysis system clearly formed the NiO and NiAl 2 O 4 spinel.…”

A self-heating gas sensor with integrated NiO thin-film for formaldehyde detection

“…In this study, the NiO films were prepared using an RF magnetron sputtering system with a NiO target of 99.98% purity [18]. The oxide was sputtered on Si 3 N 4 /Si substrates, which were placed at a distance of 11.4 cm from the NiO target.…”

A fast and facile synthesis of mesoporous nickel oxide

“…The Peaks at 854.9 eV are associated with Ni 3+ . The existence of Ni 3+ ions is considered to be caused by the Ni 2+ vacancies associated with formation of NiO at elevated temperatures [21,22]. In order to keep the charge balance near the Ni 2+ vacancies, a fraction of the Ni 2+ ions would be oxidized to Ni 3+ .…”