2015
DOI: 10.1038/nphoton.2015.1
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The rise of the GeSn laser

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Cited by 103 publications
(73 citation statements)
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“…With Si-based lasers at hand, high volume applications like chip-to-chip optical interconnects within supercomputers, switches or high-performance servers 9 as well as consumable chips with sensors for point-of-care diagnostics 10,11 would greatly benefit from a fully functional CMOS compatible PIC technology. 12 Moreover, it will allow for the integration of lasers on the same Si chip and thus for the embedding of photonic architectures into Si microtechnology. 13,14 Besides its technological and socio-economic impact, and in spite of promising steps made in the last few years, 15 the realization of a group IV integrated light source poses fascinating scientific challenges in order to overcome the physical limitation of the fundamental indirect bandgap group IV elements Si and Ge to efficiently generate light.…”
Section: Introductionmentioning
confidence: 99%
“…With Si-based lasers at hand, high volume applications like chip-to-chip optical interconnects within supercomputers, switches or high-performance servers 9 as well as consumable chips with sensors for point-of-care diagnostics 10,11 would greatly benefit from a fully functional CMOS compatible PIC technology. 12 Moreover, it will allow for the integration of lasers on the same Si chip and thus for the embedding of photonic architectures into Si microtechnology. 13,14 Besides its technological and socio-economic impact, and in spite of promising steps made in the last few years, 15 the realization of a group IV integrated light source poses fascinating scientific challenges in order to overcome the physical limitation of the fundamental indirect bandgap group IV elements Si and Ge to efficiently generate light.…”
Section: Introductionmentioning
confidence: 99%
“…12.5 at.% Sn has enabled the demonstration of fundamental direct bandgap of these alloys and even lasing 7 . This breakthrough has brought about a new class of materials in group IV, which can revolutionize the Si photonics 16 .…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] Elemental Ge has substantially higher carrier mobility, both for electrons and holes, as compared to Si. With the ability of combining Ge with other elements such as Sn, in a controlled manner, the mobility can be further enhanced through the introduction of strain or band structure modification.…”
Section: Introductionmentioning
confidence: 99%